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SI3948

更新时间: 2024-11-08 22:33:51
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飞兆/仙童 - FAIRCHILD /
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5页 96K
描述
Dual N-Channel Logic Level PowerTrench MOSFET

SI3948 数据手册

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April 2001  
SI3948DV  
Dual N-Channel Logic Level PowerTrench MOSFET  
Ò
General Description  
Features  
These N-Channel  
Logic  
Level MOSFETs are  
2.5 A, 30 V. RDS(ON) = 0.095 W @ VGS = 10 V  
produced using Fairchild Semiconductor's advanced  
PowerTrench process that has been especially tailored  
to minimize the on-state resistance and yet maintain  
low gate charge for superior switching performance.  
RDS(ON) = 0.145 W @ VGS = 4.5 V  
Very fast switching.  
Low gate charge (2.1nC typical).  
These devices are well suited for all applications where  
small size is desireable but especially low cost DC/DC  
conversion in battery powered systems.  
SuperSOTTM-6 package: small footprint (72% smaller than  
standard SO-8); low profile (1mm thick).  
SuperSOTTM-6  
SOT-223  
SO-8  
SuperSOTTM-8  
SOIC-16  
SOT-23  
D2  
4
5
S1  
3
2
1
D1  
G2  
S2  
pin 1  
G1  
SuperSOTTM-6  
6
Absolute Maximum Ratings  
Symbol Parameter  
TA = 25°C unless otherwise note  
Ratings  
Units  
VDSS  
VGSS  
ID  
Drain-Source Voltage  
30  
V
Gate-Source Voltage - Continuous  
±20  
V
A
Drain Current - Continuous  
- Pulsed  
2.5  
10  
PD  
Maximum Power Dissipation  
(Note 1a)  
(Note 1b)  
0.96  
W
0.9  
(Note 1c)  
0.7  
TJ,TSTG Operating and Storage Temperature Range  
-55 to 150  
°C  
THERMAL CHARACTERISTICS  
RqJA  
RqJC  
Thermal Resistance, Junction-to-Ambient (Note 1a)  
Thermal Resistance, Junction-to-Case  
130  
60  
°C/W  
°C/W  
(Note 1)  
© 2001 Fairchild Semiconductor Corporation  
SI3948DV Rev.A  

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