Datasheet > SI3971DV

SI3971DV

更新时间： 2024-11-21 06:11:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	59K
描述
Dual P-Channel 12-V (D-S) MOSFET

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SI3971DV 数据手册

Si3971DV

Vishay Siliconix

New Product

Dual P-Channel 12-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

APPLICATIONS

V_DS(V)

r_DS(on)(W)

I_D(A)

0.140 @ V = −4.5 V

−2.2

−1.8

−0.7

D Portable

−12

0.200 @ V = −2.5 V

− PA Switch

− Load Switch

0.300 @ V = −1.8 V

TSOP-6

Top View

3 mm

2.85 mm

Ordering Information: Si3971DV-T1—E3

Marking Code: MAxxx

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

−12

= 25_C

= 70_C

−1.9

−1.5

−2.2

−1.7

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

−8

Continuous Source Current (Diode Conduction)

−1.0

1.08

0.69

−0.72

0.80

= 25_C

= 70_C

Maximum Power Dissipation

0.51

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 5 sec

Steady State

132

115

155

Maximum Junction-to-Ambient

thJA

_C/W

Maximum Junction-to-Foot (Drain)

thJF

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 72501

S-40575—Rev. C, 29-Mar-04

www.vishay.com

12 3 4 5

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