SI3951DV-T1-E3

更新时间： 2024-11-25 07:03:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	115K
描述
Dual P-Channel 20-V (D-S) MOSFET

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中文翻译

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数据手册
替代型号

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SI3951DV-T1-E3 数据手册

New Product

Si3951DV

Vishay Siliconix

Dual P-Channel 20-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

TrenchFET^®Power MOSFET

PWM Optimized

I_D(A)^a

V_DS(V)

r_DS(on)(Ω)

Q_g(Typ)

0.115 at V_GS= - 4.5 V

0.205 at V_GS= - 2.5 V

- 2.7

- 2.0

100 % R_gtested

RoHS

3.2 nC

- 20

COMPLIANT

TSOP-6

Top View

3 mm

Marking Code

MG XXX

Lot Traceability

and Date Code

Part # Code

2.85 mm

P-Channel MOSFET

Ordering Information: Si3951DV-T1-E3 (Lead (Pb)-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Limit

Parameter

Symbol

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

- 20

V_GS

_C= 25 °C

- 2.7

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

- 2.2

I_D

Continuous Drain Current (T_J= 150 °C)

- 2.5^{b, c}

- 2.0^{b, c}

- 1.67

- 0.95^{b, c}

2.0

Pulsed Drain Current

I_DM

I_S

T_C= 25 °C

T_A= 25 °C

T_C= 25 °C

Continuous Source-Drain Diode Current

_C= 70 °C

1.3

Maximum Power Dissipation^a

P_D

1.14^{b, c}

0.73^{b, c}

T_A= 25 °C

T_A= 70 °C

Operating Junction and Storage Temperature Range

T_J, T_stg

°C

- 55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Typical

Maximum

110

Symbol

R_thJA

R_thJF

Unit

Maximum Junction-to-Ambient^{b, d}

Maximum Junction-to-Foot (Drain)

t ≤ 5 sec

Steady State

°C/W

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 sec.

d. Maximum under Steady State conditions is 130 °C/W.

Document Number: 73700

S-71597-Rev. B, 30-Jul-07

www.vishay.com

12 3 4 5 6 7

中文翻译

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SI3951DV-T1-E3 替代型号

型号	品牌	替代类型	描述	数据表
SI3951DV-T1-GE3	VISHAY	类似代替	DUAL P-CH MOSFET TSOP-6 20V 11.5MOHM @ 4.5V - Tape and Reel

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