SI3948DV

更新时间： 2024-11-25 06:11:35

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管开关光电二极管
页数	文件大小	规格书
6页	86K
描述
Dual N-Channel 30-V (D-S) MOSFET

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SI3948DV 数据手册

Si3948DV

Vishay Siliconix

New Product

Dual N-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(W)

I_D(A)

0.105 @ V = 10 V

"2.5

"2.0

0.175 @ V = 4.5 V

TSOP-6

Top View

3 mm

2.85 mm

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

"20

= 25_C

= 70_C

"2.5

"2.0

a, b

Continuous Drain Current (T = 150_C)

Pulsed Drain Current (10 ms Pulse Width)

a, b

Continuous Source Current (Diode Conduction)

1.05

= 25_C

= 70_C

1.15

a, b

Maximum Power Dissipation

0.73

Operating Junction and Storage Temperature Range

T , T

–55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 5 sec

Steady State

130

110

150

Maximum Junction-to-Ambient

thJA

C/W

Maximum Junction-to-Lead

thJL

Notes

a. Surface Mounted on FR4 Board.

b. t v 5 sec.

Document Number: 70969

S-61828—Rev. A, 23-Aug-99

www.vishay.com S FaxBack 408-970-5600

2-1

12 3 4 5 6

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