Datasheet > Si3127DV

Si3127DV

更新时间： 2024-11-06 14:53:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	305K
描述
P-Channel 60 V (D-S) MOSFET

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Si3127DV 数据手册

Si3127DV

Vishay Siliconix

www.vishay.com

P-Channel 60 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

• TrenchFET^®power MOSFET

• 100 % R_gand UIS tested

• Material categorization:

V_DS(V)

R_DS(on)(Ω) MAX.

0.089 at V_GS= -10 V

0.146 at V_GS= -4.5 V

I_D(A) ^d

-5.1

Q_g(TYP.)

-60

10.1 nC

-4

For definitions of compliance please see

www.vishay.com/doc?99912

TSOP-6 Single

APPLICATIONS

• Load switches

• DC/DC converter

Top View

Marking Code: BL

P-Channel MOSFET

Ordering Information:

Si3127DV-T1-GE3 (lead (Pb)-free and halogen-free)

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

V_DS

LIMIT

-60

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_GS

_C= 25 °C

_C= 70 °C

-5.1

-4.1

Continuous Drain Current (T_J= 150 °C)

I_D

T_A= 25 °C

T_A= 70 °C

-3.5 ^a,b

-2.8 ^a,b

-20

Pulsed Drain Current (t = 100 μs)

I_DM

I_S

_C= 25 °C

-3.5

-1.7 ^a,b

Continuous Source-Drain Diode Current

T_A= 25 °C

Avalanche Current

I_AS

-15

L = 0.1 mH

Single-Pulse Avalanche Energy

E_AS

11.25

4.2

_C= 25 °C

_C= 70 °C

2.7

2 ^a,b

1.3 ^a,b

Maximum Power Dissipation

P_D

T_A= 25 °C

T_A= 70 °C

Operating Junction and Storage Temperature Range

T_J, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum Junction-to-Ambient ^a,c

SYMBOL

TYPICAL

MAXIMUM

62.5

UNIT

t ≤ 10 s

R_thJA

R_thJF

°C/W

Maximum Junction-to-Foot

Steady State

Notes

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Maximum under steady state conditions is 110 °C/W.

d. Based on T_C= 25 °C.

S14-0767-Rev. A, 14-Apr-14

Document Number: 64282

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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