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SH8K4_09 PDF预览

SH8K4_09

更新时间: 2024-11-25 12:49:59
品牌 Logo 应用领域
罗姆 - ROHM 驱动
页数 文件大小 规格书
4页 175K
描述
4V Drive NchNch MOSFET

SH8K4_09 数据手册

 浏览型号SH8K4_09的Datasheet PDF文件第2页浏览型号SH8K4_09的Datasheet PDF文件第3页浏览型号SH8K4_09的Datasheet PDF文件第4页 
4V Drive Nch+Nch MOSFET  
SH8K4  
Structure  
Dimensions (Unit : mm)  
Silicon N-channel MOSFET  
SOP8  
Features  
1) Low on-resistance.  
2) Built-in G-S Protection Diode.  
3) Small surface Mount Package (SOP8).  
Application  
Power switching, DC / DC converter.  
Each lead has same dimensions  
Packaging specifications  
Inner circuit  
(8)  
(7)  
(6)  
(5)  
(8) (7) (6) (5)  
Package  
Taping  
TB  
Type  
Code  
Basic ordering unit (pieces)  
2500  
SH8K4  
2  
2  
(1) (2) (3) (4)  
(1) Tr1 Source  
(2) Tr1 Gate  
(3) Tr2 Source  
(4) Tr2 Gate  
(5) Tr2 Drain  
(6) Tr2 Drain  
(7) Tr1 Drain  
(8) Tr1 Drain  
Absolute maximum ratings (Ta=25C)  
<It is the same ratings for the Tr1 and Tr2.>  
1  
1  
(1)  
(2)  
(3)  
(4)  
Parameter  
Drain-source voltage  
Gate-source voltage  
Symbol  
VDSS  
VGSS  
ID  
Limits  
Unit  
V
1 ESD PROTECTION DIODE  
2 BODY DIODE  
30  
20  
V
A protection diode is included between the gate and  
the source terminals to protect the diode against static  
electricity when the product is in use. Use the protection  
circuit when the fixed voltages are exceeded.  
Continuous  
Pulsed  
9.0  
A
Drain current  
1  
IDP  
36  
A
Source current  
(Body diode)  
Continuous  
Pulsed  
IS  
1.6  
A
1  
2  
ISP  
6.4  
A
Total power dissipation  
Channel temperature  
PD  
2
W
°C  
°C  
Tch  
Tstg  
150  
Storage temperature  
1 Pw 10μs, Duty cycle 1%  
2 MOUNTED ON A CERAMIC BOARD.  
55 to +150  
Thermal resistance  
Parameter  
Symbol  
Rth (ch-a) ∗  
Limits  
62.5  
Unit  
Channel to ambient  
°C / W  
MOUNTED ON A CERAMIC BOARD.  
www.rohm.com  
2009.12 - Rev.A  
1/3  
c
2009 ROHM Co., Ltd. All rights reserved.  

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