Datasheet > SH8M11

SH8M11

更新时间： 2024-11-21 09:26:59

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
11页	1293K
描述
4V Drive Nch + Pch MOSFET

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中文翻译

获取价格

数据手册

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SH8M11 数据手册

Data Sheet

4V Drive Nch + Pch MOSFET

SH8M11

 Structure

 Dimensions (Unit : mm)

SOP8

Silicon N-channel MOSFET/

Silicon P-channel MOSFET

(8)

(5)

Features

1) Low on-resistance.

2) High power package(SOP8).

3) Low voltage drive(4V drive).

(1)

(4)

 Application

Switching

 Packaging specifications

 Inner circuit

(8)

(7)

(6)

(5)

Package

Taping

Type

Code

Basic ordering unit (pieces)

2500



SH8M11

∗2

(1) Tr1 Source

(2) Tr1 Gate

(3) Tr2 Source

(4) Tr2 Gate

(5) Tr2 Drain

(6) Tr2 Drain

(7) Tr1 Drain

(8) Tr1 Drain

∗1

 Absolute maximum ratings (Ta = 25C)

Parameter Symbol

(1)

(2)

(3)

(4)

Limits

Unit

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

Tr1 : N-ch Tr2 : P-ch

Drain-source voltage

V_DSS

V_GSS

I_D

20

3.5

14

1.6

30

20

3.5

12

1.6

12

Gate-source voltage

Continuous

Pulsed

Drain current

I_DP

I_s

Continuous

Pulsed

Source current

(Body Diode)

I_sp

2.0

1.4

150

W / TOTAL

P_D

Power dissipation

W / ELEMENT

Channel temperature

Tch

C

55 to +150

Range of storage temperature

*1 Pw10s, Duty cycle1%

Tstg

*2 Mounted on a ceramic board.

www.rohm.com

2011.10 - Rev.A

1/10

12 3 4 5 6 7...11

中文翻译

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