Datasheet > SH8M3

SH8M3

更新时间： 2024-11-11 09:26:59

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
6页	182K
描述
4V Drive Nch+Pch MOSFET

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中文翻译

获取价格

数据手册

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SH8M3 数据手册

4V Drive Nch+Pch MOSFET

SH8M3

Structure

Dimensions (Unit : mm)

Silicon N-channel / P-channel MOSFET

SOP8

Features

1) Low on-resistance.

2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (SOP8).

Application

Power switching, DC / DC converter.

Each lead has same dimensions

Packaging specifications

Inner circuit

(8)

(7)

(6)

(5)

(8) (7) (6) (5)

Package

Taping

Type

Code

Basic ordering unit (pieces)

2500

SH8M3

∗2

(1) (2) (3) (4)

(1) Tr1 (Nch) Source

(2) Tr1 (Nch) Gate

(3) Tr2 (Pch) Source

(4) Tr2 (Pch) Gate

(5) Tr2 (Pch) Drain

(6) Tr2 (Pch) Drain

(7) Tr1 (Nch) Drain

(8) Tr1 (Nch) Drain

∗1

Absolute maximum ratings (Ta=25C)

Limits

Nchannel

(1)

(2)

(3)

(4)

Parameter

Symbol

Unit

Pchannel

−30

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

V_DSS

V_GSS

I_D

Drain-source voltage

Gate-source voltage

∗A protection diode is included between the gate and

the source terminals to protect the diode against static

electricity when the product is in use. Use the protection

circuit when the fixed voltages are exceeded.

Continuous

Pulsed

5.0

4.5

Drain current

∗1

I_DP

I_S

Continuous

Pulsed

1.6

−1.6

−18

Source current

(Body diode)

∗1

I_SP

∗2

P_D

°C

Total power dissipation

Channel temperature

Tch

150

Storage temperature

∗1 Pw≤10μs, Duty cycle≤1%

Tstg

−55 to +150

∗2 MOUNTED ON A CERAMIC BOARD.

Thermal resistance

Parameter

Symbol

Rth (ch-a)^∗

Limits

62.5

Unit

Channel to ambient

∗MOUNTED ON A CERAMIC BOARD.

°C / W

www.rohm.com

2009.12 - Rev.A

1/5

12 3 4 5 6

中文翻译

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