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SH8M70 PDF预览

SH8M70

更新时间: 2024-11-11 06:11:31
品牌 Logo 应用领域
罗姆 - ROHM 驱动
页数 文件大小 规格书
8页 214K
描述
4V Drive Nch+Pch MOSFET

SH8M70 数据手册

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4V Drive Nch+Pch MOSFET  
SH8M70  
Structure  
Dimensions (Unit : mm)  
Silicon N-channel / P-channel MOSFET  
SOP8  
Features  
1) Low on-resistance.  
2) Built-in G-S Protection Diode.  
3) Small Surface Mount Package (SOP8).  
Application  
Power switching, DC / DC converter.  
Each lead has same dimensions  
Packaging specifications  
Inner circuit  
(8)  
(7)  
(6)  
(5)  
(8) (7) (6) (5)  
Package  
Taping  
TB  
Type  
Code  
Basic ordering unit (pieces)  
2500  
SH8M70  
2  
2  
(1) (2) (3) (4)  
(1) Tr1 Source  
(2) Tr1 Gate  
(3) Tr2 Source  
(4) Tr2 Gate  
(5) Tr2 Drain  
(6) Tr2 Drain  
(7) Tr1 Drain  
(8) Tr1 Drain  
1  
1  
(1)  
(2)  
(3)  
(4)  
1 ESD PROTECTION DIODE  
2 BODY DIODE  
A protection diode is included between the gate and  
the source terminals to protect the diode against static  
electricity when the product is in use. Use the protection  
circuit when the fixed voltages are exceeded.  
Absolute maximum ratings (Ta=25C)  
Limits  
Parameter  
Symbol  
Unit  
N-ch  
250  
30  
P-ch  
250  
20  
2.5  
Drain-source voltage  
Gate-source voltage  
VDSS  
VGSS  
ID  
V
V
Continuous  
Pulsed  
3.0  
12  
A
Drain current  
1  
IDP  
10  
A
Source current  
(Body diode)  
Continuous  
Pulsed  
IS  
1.0  
12  
1.0  
10  
A
1  
ISP  
A
2  
Total power dissipation  
Channel temperature  
PD  
2.0(TOTAL) 1.4(ELEMENT)  
W
°C  
°C  
Tch  
150  
Storage temperature  
1 Pw10μs, Duty cycle1%  
2 MOUNTED ON A CERAMIC BOARD.  
Tstg  
55 to +150  
www.rohm.com  
2009.12 - Rev.A  
1/7  
c
2009 ROHM Co., Ltd. All rights reserved.  

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