Datasheet > SH8M70_09

SH8M70_09

更新时间： 2024-11-11 06:11:31

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
8页	214K
描述
4V Drive Nch+Pch MOSFET

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中文翻译

获取价格

数据手册

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SH8M70_09 数据手册

4V Drive Nch+Pch MOSFET

SH8M70

Structure

Dimensions (Unit : mm)

Silicon N-channel / P-channel MOSFET

SOP8

Features

1) Low on-resistance.

2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (SOP8).

Application

Power switching, DC / DC converter.

Each lead has same dimensions

Packaging specifications

Inner circuit

(8)

(7)

(6)

(5)

(8) (7) (6) (5)

Package

Taping

Type

Code

Basic ordering unit (pieces)

2500

SH8M70

∗2

(1) (2) (3) (4)

(1) Tr1 Source

(2) Tr1 Gate

(3) Tr2 Source

(4) Tr2 Gate

(5) Tr2 Drain

(6) Tr2 Drain

(7) Tr1 Drain

(8) Tr1 Drain

∗1

(1)

(2)

(3)

(4)

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

∗A protection diode is included between the gate and

the source terminals to protect the diode against static

electricity when the product is in use. Use the protection

circuit when the fixed voltages are exceeded.

Absolute maximum ratings (Ta=25C)

Limits

Parameter

Symbol

Unit

N-ch

250

P-ch

−250

−20

2.5

Drain-source voltage

Gate-source voltage

V_DSS

V_GSS

I_D

Continuous

Pulsed

3.0

Drain current

∗1

I_DP

Source current

(Body diode)

Continuous

Pulsed

I_S

1.0

−1.0

−10

∗1

I_SP

∗2

Total power dissipation

Channel temperature

P_D

2.0(TOTAL) 1.4(ELEMENT)

°C

Tch

150

Storage temperature

∗1 Pw≤10μs, Duty cycle≤1%

∗2 MOUNTED ON A CERAMIC BOARD.

Tstg

−55 to +150

www.rohm.com

2009.12 - Rev.A

1/7

12 3 4 5 6 7 8

中文翻译

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