品牌 | Logo | 应用领域 |
RECTRON | / | |
页数 | 文件大小 | 规格书 |
5页 | 392K | |
描述 | ||
Reverse Voltage Vr : 1000 V;Forward Current Io : 1.0 A;Max Surge Current : 20 A;Forward Voltage Vf : 1.7 V;Reverse Current Ir : 5 uA;Recovery Time : 75 ns;Package / Case : SOD-123F(L);Mounting Style : SMD/SMT;Notes : 1000 V,1.0 A,75 nS,SOD-123F(L) |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SH8M08GAETCEBAA01 | ETC |
获取价格 |
eâ¢MMCTM Product Family | |
SH8M08GAETCEBAAI01 | ETC |
获取价格 |
eâ¢MMCTM Product Family | |
SH8M08GAETCEBAE01 | ETC |
获取价格 |
eâ¢MMCTM Product Family | |
SH8M08GBATCEBAA01 | ETC |
获取价格 |
eâ¢MMCTM Product Family | |
SH8M08GBATCEBAI01 | ETC |
获取价格 |
eâ¢MMCTM Product Family | |
SH8M11 | ROHM |
获取价格 |
4V Drive Nch + Pch MOSFET | |
SH8M12 | ROHM |
获取价格 |
4V Drive Nch + Pch MOSFET | |
SH8M12TB | ROHM |
获取价格 |
Power Field-Effect Transistor, 5A I(D), 30V, 0.063ohm, 2-Element, N-Channel and P-Channel, | |
SH8M13 | ROHM |
获取价格 |
4V Drive Nch + Pch MOSFET | |
SH8M13TB | ROHM |
获取价格 |
Power Field-Effect Transistor, 6A I(D), 30V, 0.049ohm, 2-Element, N-Channel and P-Channel, |