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SGS23N60UF PDF预览

SGS23N60UF

更新时间: 2024-11-07 22:19:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管开关电动机控制瞄准线双极性晶体管局域网
页数 文件大小 规格书
7页 541K
描述
Ultra-Fast IGBT

SGS23N60UF 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220F包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
风险等级:5.81Is Samacsys:N
其他特性:LOW CONDUCTION LOSS, HIGH SPEED SWITCHING外壳连接:ISOLATED
最大集电极电流 (IC):23 A集电极-发射极最大电压:600 V
配置:SINGLE最大降落时间(tf):220 ns
门极发射器阈值电压最大值:7.5 V门极-发射极最大电压:20 V
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):60 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:MOTOR CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):320 ns标称接通时间 (ton):55 ns
Base Number Matches:1

SGS23N60UF 数据手册

 浏览型号SGS23N60UF的Datasheet PDF文件第2页浏览型号SGS23N60UF的Datasheet PDF文件第3页浏览型号SGS23N60UF的Datasheet PDF文件第4页浏览型号SGS23N60UF的Datasheet PDF文件第5页浏览型号SGS23N60UF的Datasheet PDF文件第6页浏览型号SGS23N60UF的Datasheet PDF文件第7页 
April 2001  
IGBT  
SGS23N60UF  
Ultra-Fast IGBT  
General Description  
Features  
Fairchild's UF series of Insulated Gate Bipolar Transistors  
(IGBTs) provides low conduction and switching losses.  
The UF series is designed for applications such as motor  
control and general inverters where high speed switching is  
a required feature.  
High speed switching  
Low saturation voltage : V  
High input impedance  
= 2.1 V @ I = 12A  
CE(sat)  
C
Application  
AC & DC Motor controls, general purpose inverters, robotics, servo controls  
C
E
G
TO-220F  
G C E  
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Description  
SGS23N60UF  
Units  
V
V
V
Collector-Emitter Voltage  
600  
CES  
GES  
Gate-Emitter Voltage  
± 20  
V
Collector Current  
@ T  
=
25°C  
23  
A
C
I
I
C
Collector Current  
@ T = 100°C  
12  
92  
A
C
Pulsed Collector Current  
A
CM (1)  
P
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction Temperature  
Storage Temperature Range  
Maximum Lead Temp. for soldering  
purposes, 1/8” from case for 5 seconds  
@ T  
=
25°C  
73  
W
W
°C  
°C  
D
C
@ T = 100°C  
29  
C
T
-55 to +150  
-55 to +150  
J
T
stg  
T
300  
°C  
L
Notes :  
(1) Repetitive rating : Pulse width limited by max. junction temperature  
Thermal Characteristics  
Symbol  
Parameter  
Typ.  
--  
Max.  
Units  
°C/W  
°C/W  
R
R
Thermal Resistance, Junction-to-Case  
1.7  
θJC  
θJA  
Thermal Resistance, Junction-to-Ambient  
--  
62.5  
©2001 Fairchild Semiconductor Corporation  
SGS23N60UF Rev. A  

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