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SGS23N60UFDTU PDF预览

SGS23N60UFDTU

更新时间: 2024-02-25 02:39:04
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关
页数 文件大小 规格书
8页 600K
描述
High speed switching

SGS23N60UFDTU 数据手册

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April 2001  
IGBT  
SGS23N60UFD  
Ultra-Fast IGBT  
General Description  
Features  
Fairchild's UFD series of Insulated Gate Bipolar Transistors  
(IGBTs) provides low conduction and switching losses.  
The UFD series is designed for applications such as motor  
control and general inverters where high speed switching is  
a required feature.  
High speed switching  
Low saturation voltage : V  
High input impedance  
= 2.1 V @ I = 12A  
CE(sat)  
C
CO-PAK, IGBT with FRD : t = 42ns (typ.)  
rr  
Application  
AC & DC Motor controls, general purpose inverters, robotics, servo controls  
C
E
G
TO-220F  
G C E  
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Description  
SGS23N60UFD  
Units  
V
V
V
Collector-Emitter Voltage  
600  
CES  
GES  
Gate-Emitter Voltage  
± 20  
V
Collector Current  
@ T  
=
25°C  
23  
A
C
I
C
Collector Current  
@ T = 100°C  
12  
A
C
I
I
I
Pulsed Collector Current  
92  
A
CM (1)  
Diode Continuous Forward Current  
Diode Maximum Forward Current  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction Temperature  
Storage Temperature Range  
Maximum Lead Temp. for soldering  
purposes, 1/8” from case for 5 seconds  
@ T = 100°C  
12  
92  
A
F
C
A
FM  
P
@ T  
=
25°C  
73  
W
W
°C  
°C  
D
C
@ T = 100°C  
29  
C
T
-55 to +150  
-55 to +150  
J
T
stg  
T
300  
°C  
L
Notes :  
(1) Repetitive rating : Pulse width limited by max. junction temperature  
Thermal Characteristics  
Symbol  
Parameter  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Case  
Typ.  
--  
Max.  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
(IGBT)  
1.7  
1.2  
θJC  
θJC  
θJA  
(DIODE)  
--  
Thermal Resistance, Junction-to-Ambient  
--  
62.5  
©2001 Fairchild Semiconductor Corporation  
SGS23N60UFD Rev. A  

SGS23N60UFDTU 替代型号

型号 品牌 替代类型 描述 数据表
SGH15N60RUFTU FAIRCHILD

类似代替

Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN
SGS6N60UFDTU FAIRCHILD

类似代替

Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220F, 3 PIN

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