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SGS6N60 PDF预览

SGS6N60

更新时间: 2024-01-05 01:40:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 双极性晶体管
页数 文件大小 规格书
7页 533K
描述
Ultra-Fast IGBT

SGS6N60 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220F包装说明:TO-220F, 3 PIN
针数:3Reach Compliance Code:not_compliant
风险等级:5.8其他特性:LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
外壳连接:ISOLATED最大集电极电流 (IC):6 A
集电极-发射极最大电压:600 V配置:SINGLE
最大降落时间(tf):300 ns门极发射器阈值电压最大值:6.5 V
门极-发射极最大电压:20 VJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT APPLICABLE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):9 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLE晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):202 ns
标称接通时间 (ton):54 ns

SGS6N60 数据手册

 浏览型号SGS6N60的Datasheet PDF文件第2页浏览型号SGS6N60的Datasheet PDF文件第3页浏览型号SGS6N60的Datasheet PDF文件第4页浏览型号SGS6N60的Datasheet PDF文件第5页浏览型号SGS6N60的Datasheet PDF文件第6页浏览型号SGS6N60的Datasheet PDF文件第7页 
April 2001  
IGBT  
SGS6N60UF  
Ultra-Fast IGBT  
General Description  
Features  
Fairchild's UF series of Insulated Gate Bipolar Transistors  
(IGBTs) provides low conduction and switching losses.  
The UF series is designed for applications such as motor  
control and general inverters where high speed switching is  
a required feature.  
High speed switching  
Low saturation voltage : V  
High input impedance  
= 2.1 V @ I = 3A  
CE(sat)  
C
Application  
AC & DC Motor controls, general purpose inverters, robotics, servo controls  
C
E
G
TO-220F  
G C E  
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Description  
SGS6N60UF  
Units  
V
V
V
Collector-Emitter Voltage  
600  
CES  
GES  
Gate-Emitter Voltage  
± 20  
V
Collector Current  
@ T  
=
25°C  
6
A
C
I
I
C
Collector Current  
@ T = 100°C  
3
A
C
Pulsed Collector Current  
25  
22  
A
CM (1)  
P
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction Temperature  
Storage Temperature Range  
Maximum Lead Temp. for soldering  
purposes, 1/8” from case for 5 seconds  
@ T  
=
25°C  
W
W
°C  
°C  
D
C
@ T = 100°C  
9
C
T
-55 to +150  
-55 to +150  
J
T
stg  
T
300  
°C  
L
Notes :  
(1) Repetitive rating : Pulse width limited by max. junction temperature  
Thermal Characteristics  
Symbol  
Parameter  
Typ.  
Max.  
Units  
°C/W  
°C/W  
R
R
Thermal Resistance, Junction-to-Case  
--  
--  
5.5  
θJC  
θJA  
Thermal Resistance, Junction-to-Ambient  
62.5  
©2001 Fairchild Semiconductor Corporation  
SGS6N60UF Rev. A  

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