是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-3P | 包装说明: | TO-3P, 3 PIN |
针数: | 2 | Reach Compliance Code: | unknown |
风险等级: | 5.67 | 其他特性: | LOW CONDUCTION LOSS, HIGH SPEED SWITCHING |
最大集电极电流 (IC): | 24 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE | 最大降落时间(tf): | 200 ns |
门极发射器阈值电压最大值: | 8.5 V | 门极-发射极最大电压: | 20 V |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT APPLICABLE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 160 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT APPLICABLE |
晶体管应用: | MOTOR CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 260 ns | 标称接通时间 (ton): | 54 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
SGS6N60UFDTU | FAIRCHILD |
类似代替 |
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220F, 3 PIN | |
SGS23N60UFDTU | FAIRCHILD |
类似代替 |
High speed switching |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SGH20N120RUF | FAIRCHILD |
获取价格 |
Short Circuit Rated IGBT | |
SGH20N120RUFD | FAIRCHILD |
获取价格 |
Short Circuit Rated IGBT | |
SGH20N120RUFDTU | FAIRCHILD |
获取价格 |
暂无描述 | |
SGH20N120RUFTU | FAIRCHILD |
获取价格 |
Insulated Gate Bipolar Transistor, 32A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN | |
SGH20N60RUF | FAIRCHILD |
获取价格 |
Short Circuit Rated IGBT | |
SGH20N60RUFD | FAIRCHILD |
获取价格 |
Short Circuit Rated IGBT | |
SGH20N60RUFDTU | FAIRCHILD |
获取价格 |
SGH20N60RUFD Short Circuit Rated IGBT | |
SGH20N60RUFDTU | ONSEMI |
获取价格 |
分立,短路额定 IGBT | |
SGH20N60RUFTU | FAIRCHILD |
获取价格 |
Insulated Gate Bipolar Transistor, 32A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN | |
SGH23N60UF | FAIRCHILD |
获取价格 |
N-CHANNEL IGBT |