是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-220F | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.91 | 其他特性: | LOW CONDUCTION LOSS, HIGH SPEED SWITCHING |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 8 A |
集电极-发射极最大电压: | 600 V | 配置: | SINGLE |
最大降落时间(tf): | 200 ns | 门极发射器阈值电压最大值: | 8.5 V |
门极-发射极最大电压: | 20 V | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 35 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | MOTOR CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 290 ns |
标称接通时间 (ton): | 39 ns |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SGS5N60RUFD | FAIRCHILD |
获取价格 |
Short Circuit Rated IGBT | |
SGS5N60RUFDTU | FAIRCHILD |
获取价格 |
Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220F, 3 PIN | |
SGS60DA070D | STMICROELECTRONICS |
获取价格 |
TRANSISTOR,BJT POWER MODULE,DARLINGTON,700V V(BR)CEO,60A I(C) | |
SGS6N60 | FAIRCHILD |
获取价格 |
Ultra-Fast IGBT | |
SGS6N60UF | FAIRCHILD |
获取价格 |
Ultra-Fast IGBT | |
SGS6N60UFD | FAIRCHILD |
获取价格 |
Ultra-Fast IGBT | |
SGS6N60UFDTU | FAIRCHILD |
获取价格 |
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220F, 3 PIN | |
SGS6N60UFDTU | ROCHESTER |
获取价格 |
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220F, 3 PIN | |
SGS6N60UFTU | ROCHESTER |
获取价格 |
6A, 600V, N-CHANNEL IGBT, TO-220F, 3 PIN | |
SGS80DA020D | STMICROELECTRONICS |
获取价格 |
TRANSISTOR,BJT POWER MODULE,DARLINGTON,200V V(BR)CEO,80A I(C) |