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SGS5N60RUFDTU PDF预览

SGS5N60RUFDTU

更新时间: 2024-01-21 02:02:22
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 双极性晶体管
页数 文件大小 规格书
7页 558K
描述
Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220F, 3 PIN

SGS5N60RUFDTU 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220F包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
风险等级:5.91其他特性:LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
外壳连接:ISOLATED最大集电极电流 (IC):8 A
集电极-发射极最大电压:600 V配置:SINGLE
最大降落时间(tf):200 ns门极发射器阈值电压最大值:8.5 V
门极-发射极最大电压:20 VJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):35 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):290 ns
标称接通时间 (ton):39 ns

SGS5N60RUFDTU 数据手册

 浏览型号SGS5N60RUFDTU的Datasheet PDF文件第2页浏览型号SGS5N60RUFDTU的Datasheet PDF文件第3页浏览型号SGS5N60RUFDTU的Datasheet PDF文件第4页浏览型号SGS5N60RUFDTU的Datasheet PDF文件第5页浏览型号SGS5N60RUFDTU的Datasheet PDF文件第6页浏览型号SGS5N60RUFDTU的Datasheet PDF文件第7页 
April 2001  
IGBT  
SGS5N60RUF  
Short Circuit Rated IGBT  
General Description  
Features  
Fairchild's RUF series of Insulated Gate Bipolar Transistors  
(IGBTs) provide low conduction and switching losses as  
well as short circuit ruggedness. The RUF series is  
designed for applications such as motor control,  
uninterrupted power supplies (UPS) and general inverters  
where short circuit ruggedness is a required feature.  
Short circuit rated 10us @ T = 100°C, V = 15V  
C
GE  
High speed switching  
Low saturation voltage : V  
High input impedance  
= 2.2 V @ I = 5A  
CE(sat)  
C
Application  
AC & DC Motor controls, general purpose inverters, robotics, servo controls  
C
E
G
TO-220F  
G C E  
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Description  
SGS5N60RUF  
Units  
V
V
V
Collector-Emitter Voltage  
600  
CES  
GES  
Gate-Emitter Voltage  
± 20  
V
Collector Current  
@ T  
=
25°C  
8
A
C
I
I
C
Collector Current  
@ T = 100°C  
5
A
C
Pulsed Collector Current  
15  
10  
A
CM (1)  
T
Short Circuit Withstand Time  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction Temperature  
Storage Temperature Range  
Maximum Lead Temp. for soldering  
purposes, 1/8” from Case for 5 Seconds  
@ T = 100°C  
µs  
W
W
°C  
°C  
SC  
C
P
@ T  
=
25°C  
35  
D
C
@ T = 100°C  
14  
C
T
-55 to +150  
-55 to +150  
J
T
stg  
T
300  
°C  
L
Notes :  
(1) Repetitive rating : Pulse width limited by max. junction temperature  
Thermal Characteristics  
Symbol  
Parameter  
Typ.  
--  
Max.  
Units  
°C/W  
°C/W  
R
R
Thermal Resistance, Junction-to-Case  
3.5  
θJC  
θJA  
Thermal Resistance, Junction-to-Ambient  
--  
62.5  
©2001 Fairchild Semiconductor Corporation  
SGS5N60RUF Rev. A  

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