品牌 | Logo | 应用领域 |
意法半导体 - STMICROELECTRONICS | / | |
页数 | 文件大小 | 规格书 |
1页 | 38K | |
描述 | ||
TRANSISTOR,BJT POWER MODULE,DARLINGTON,700V V(BR)CEO,60A I(C) |
生命周期: | Obsolete | Reach Compliance Code: | compliant |
风险等级: | 5.84 | 最大集电极电流 (IC): | 60 A |
最小直流电流增益 (hFE): | 30 | 最大降落时间(tf): | 800 ns |
元件数量: | 1 | 最高工作温度: | 150 °C |
最大功率耗散 (Abs): | 400 W | 子类别: | BIP General Purpose Power |
VCEsat-Max: | 3 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SGS6N60 | FAIRCHILD |
获取价格 |
Ultra-Fast IGBT | |
SGS6N60UF | FAIRCHILD |
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Ultra-Fast IGBT | |
SGS6N60UFD | FAIRCHILD |
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Ultra-Fast IGBT | |
SGS6N60UFDTU | FAIRCHILD |
获取价格 |
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220F, 3 PIN | |
SGS6N60UFDTU | ROCHESTER |
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Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220F, 3 PIN | |
SGS6N60UFTU | ROCHESTER |
获取价格 |
6A, 600V, N-CHANNEL IGBT, TO-220F, 3 PIN | |
SGS80DA020D | STMICROELECTRONICS |
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TRANSISTOR,BJT POWER MODULE,DARLINGTON,200V V(BR)CEO,80A I(C) | |
SGSA2-S500 | BANNER |
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SGSA-S Series Enclosures | |
SGSA2-S500-M | BANNER |
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SGSA-S Series Enclosures | |
SGSA3-S400 | BANNER |
获取价格 |
SGSA-S Series Enclosures |