Datasheet > SG50N06DS

SG50N06DS

更新时间： 2022-04-06 15:52:32

品牌	Logo	应用领域
SIRECTIFIER		晶体双极型晶体管双极性晶体管栅
页数	文件大小	规格书
2页	158K
描述
绝缘栅双极型晶体管（IGBT）Isolated Gate Bipolar Transistor (IGBTs),IGBT分立器件Discrete IGBTs。

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SG50N06DS 数据手册

SG50N06S, SG50N06DS

Discrete IGBTs

=25^o

C, unless otherwise specified)

Characteristic Values

Symbol

Test Conditions

Unit

min.

typ.

max.

gts

C=IC90; VCE=10V

Pulse test, t 300us, duty cycle 2%

ies

4000

340

100

110

oes

CE=25V; VGE=0V; f=1MHz

res

180

IC=IC90; VGE=15V; VCE=0.5VCES

100

d(on)

d(off)

off

d(on)

Inductive load, T

=IC90; VGE=15V; L=100uH

CE=0.8VCES'; R =Roff=2.7

=25^o

200

150

Remarks:Switching times may increase

for VCE(Clamp) 0.8VCES' higher T or

increased R

Inductive load, T

=IC90; VGE=15V; L=100uH

CE=0.8VCES'; R =Roff=2.7

=125^o

d(off)

Remarks:Switching times may increase

for VCE(Clamp) 0.8VCES' higher T or

increased R

280

250

4.2

off

K/W

thJC

0.50

thCK

0.05

=25^o

C, unless otherwise specified)

Reverse Diode (FRED)

Symbol

Characteristic Values

Test Conditions

Unit

min.

typ.

max.

=60A; TVJ=150^o

1.75

2.40

Pulse test, t 300us, duty cycle d 2%; TVJ=25^o

VJ=25^oC; VR=VRRM

650

2.5

VJ=150^o

thJC

=IC90; VGE=0V; -di

/dt=100A/us; V

=540V

8.0

=25^o

F=1A; -di/dt=50A/us; V

=30V; T C

0.85

K/W

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