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SG-51P PDF预览

SG-51P

更新时间: 2024-11-25 22:43:15
品牌 Logo 应用领域
爱普生 - EPSON 振荡器晶体振荡器
页数 文件大小 规格书
3页 129K
描述
Crystal Oscillators(HCMOS/TTL DUAL IN LINE PLASTIC FULL SIZE SG-51/ HALF SIZE SG-531)

SG-51P 数据手册

 浏览型号SG-51P的Datasheet PDF文件第2页浏览型号SG-51P的Datasheet PDF文件第3页 
Crystal Oscillators - Seiko Epson  
HCMOS/TTL DUAL IN LINE PLASTIC FULL SIZE SG-51/ HALF SIZE SG-531  
SG-51/Half Size SG531  
Features  
• Frequency range 1.025MHz-125.0MHz  
• Cylindrical type AT cut crystal quartz built in,  
thereby assuring high reliability  
• Suitable for automatic insertion  
• Use of CMOS IC enables reduction of current  
consumption  
SG531  
• Output load 10LSTTL/30-50pF  
• Available with output enable and standby  
functions - SG51P and SG531P series  
• Pin compatible with 8 pin and 14 pin metal can  
versions  
SG51  
• Packaged in plastic DIP package saves board  
space  
• Extensive stock holding on SG531 series  
Specifications  
Specifications  
Remarks  
Item  
Symbol  
SG-51P/531P  
SG-51PTJ/531 PTJ SG-51PH/531PH  
1.0250MHz to  
26.0000MHz  
26.0001MHZ to 66.6667MHZ  
Output frequency range  
fo  
pp  
-0.3V to +7.0V  
5.0V±0.5V  
Power source  
voltage  
Max. supply voltage  
V
-GND  
DD  
V
Operating voltage  
Storage temp.  
STG  
-55°C to +125°C  
-55°C to +100°C  
-10°C to +70°C  
Under 260°C within 10 sec.  
B: ±50ppm  
Temperature  
range  
T
OPR  
Operating temp.  
T
T
SOL  
Don’t heat up the package more than 150°C  
Soldering condition (lead part)  
Frequency stability  
-10°C to +70°C  
B Type is possible up to 55.0MHz  
No load condition  
f/fo  
C: ±100ppm  
23mA MAX.  
40% to 60%  
35mA MAX.  
Current consumption  
lop  
DD  
1.2V  
40% to 60%  
level  
Duty  
C-MOS level  
TTL level  
Tw/T  
45% to 55%  
1.4V level  
DD  
DD  
V
OH  
V
- 0.4V MIN.  
2.4V MIN.  
-0.4V MIN.  
-4µA  
Output voltage  
V
OH  
)
-400µA  
(I  
OL  
0.4V MAX.  
8mA  
V
OL  
16mA  
4mA  
50pF MAX.  
(I  
)
50pF MAX.  
Output load  
C-MOS  
CL  
N
10TTL MAX.  
2.0V MIN  
0.8V  
5TTL MAX.  
3.5V MIN.  
1.5V MAX.  
28mA MAX.  
condition (fan out) TTL  
IH  
µ
DD  
IH  
V
2.0V MIN.  
0.8V MAX.  
20mA MAX.  
I = 1 A MAX. (OE=V )  
Output enable/disable input voltage  
IL  
I
µ
µ
IL  
V
=-100 A MIN. (OE=GND), PTJ: -500 A  
OE  
12mA MAX.  
OE=GN  
Output disable current  
I
DD  
C-MOS load : 20% to 80% V  
Output  
C-MOS level  
TTL level  
TLH  
8nsec.MAX  
8nsec.MAX  
4msec. MAX.  
5nsec. MAX  
5nsec. MAX  
7nsec. MAX.  
7nsec. MAX.  
T
TTL load : 0.4V to 2.4V  
rise time  
Output  
DD  
C-MOS load : 80% to 20% V  
C-MOS level  
TTL level  
THL  
T
TTL load : 2.4V to 0.4V  
fall time  
DD  
More than for 1ms until V =0V to 4.5V  
Oscillation start up time  
OSC  
10msec. MAX.  
t
Time at 4.5V to be 0sec.  
DD  
±5ppm/year MAX.  
±20ppm MAX.  
Ta = 25°C, V  
=5V, first year  
Aging  
fa  
Drop Test of three times on hard board from  
75cm height or excitation test with 3000G x  
0.3ms x 1/2 sine wave in 3 directions.  
Shock resistance  
S.R.  
Notes  
• Unless otherwise stated, characteristics (specifications) shown in the above table are based on the rated  
operating temperature and voltage condition.  
• External by-pass capacitor is recommended.  
TEL: +44 1635 528520 FAX: +44 1635 528443  

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