Datasheet > SG50N06T

SG50N06T

更新时间： 2024-11-23 00:02:03

品牌	Logo	应用领域
SIRECTIFIER		晶体双极型晶体管双极性晶体管栅
页数	文件大小	规格书
2页	108K
描述
绝缘栅双极型晶体管（IGBT）Isolated Gate Bipolar Transistor (IGBTs),IGBT分立器件Discrete IGBTs。

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中文翻译

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数据手册

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SG50N06T 数据手册

SG50N06T, SG50N06DT

Discrete IGBTs

Dim.

Millimeter

Min. Max. Min.

Inches

Max.

Dimensions TO-247AD

19.81 20.32 0.780 0.800

20.80 21.46 0.819 0.845

15.75 16.26 0.610 0.640

3.55 3.65 0.140 0.144

G=Gate, C=Collector,

C(TAB)

E=Emitter,TAB=Collector

4.32 5.49 0.170 0.216

5.4

6.2 0.212 0.244

1.65 2.13 0.065 0.084

4.5

0.177

1.0

1.4 0.040 0.055

10.8 11.0 0.426 0.433

4.7

0.4

5.3 0.185 0.209

0.8 0.016 0.031

SG50N06DT

SG50N06T

1.5 2.49 0.087 0.102

Symbol

Test Conditions

Maximum Ratings

Unit

VCES

VCGR

TJ=25^oC to 150^oC

600

TJ=25^oC to 150^oC; RGE=1 M ;

VGES

VGEM

Continuous

Transient

±20

±30

IC25

IC90

ICM

TC=25^oC

200

TC=90^oC

TC=25^oC, 1 ms

VGE=15V; TVJ=125^oC; RG=10

Clamped inductive load

ICM=100

@ 0.8 VCES

SSOA

(RBSOA)

TC=25^oC

300

-55...+150

150

-55...+150

TJM

Tstg

^oC

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10s

300

Mounting torque

1.13/10

Nm/Ib.in.

Weight

Characteristic Values

min. typ. max.

=25^o

C, unless otherwise specified)

Symbol

Test Conditions

Unit

BV^CES

=250uA; VGE=0V

=250uA; VCE=VGE

600

2.5

GE(th)

5.0

200

CES

CE=0.8VCES

GE=0V;

;

=25^o

=125^o

GES

CE=0V; VGE=±20V

=IC90; VGE=15

±100

2.5

CE(sat)

中文翻译

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