Datasheet > SG50N06T

SG50N06T

更新时间： 2024-11-23 06:11:23

品牌	Logo	应用领域
SIRECT		双极性晶体管
页数	文件大小	规格书
2页	109K
描述
Discrete IGBTs

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SG50N06T 数据手册

SG50N06T, SG50N06DT

Discrete IGBTs

Dim.

Millimeter

Min. Max. Min.

Inches

Max.

Dimensions TO-247AD

19.81 20.32 0.780 0.800

20.80 21.46 0.819 0.845

15.75 16.26 0.610 0.640

3.55 3.65 0.140 0.144

G=Gate, C=Collector,

C(TAB)

E=Emitter,TAB=Collector

4.32 5.49 0.170 0.216

5.4

6.2 0.212 0.244

1.65 2.13 0.065 0.084

4.5

0.177

1.0

1.4 0.040 0.055

10.8 11.0 0.426 0.433

4.7

0.4

5.3 0.185 0.209

0.8 0.016 0.031

SG50N06DT

SG50N06T

1.5 2.49 0.087 0.102

Symbol

Test Conditions

Maximum Ratings

Unit

VCES

VCGR

TJ=25^oC to 150^oC

600

TJ=25^oC to 150^oC; RGE=1 M ;

VGES

VGEM

Continuous

Transient

±20

±30

IC25

IC90

ICM

TC=25^oC

200

TC=90^oC

TC=25^oC, 1 ms

VGE=15V; TVJ=125^oC; RG=10

Clamped inductive load

ICM=100

@ 0.8 VCES

SSOA

(RBSOA)

TC=25^oC

300

-55...+150

150

-55...+150

TJM

Tstg

^oC

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10s

300

Mounting torque

1.13/10

Nm/Ib.in.

Weight

Characteristic Values

min. typ. max.

=25^o

C, unless otherwise specified)

Symbol

Test Conditions

Unit

BV^CES

=250uA; VGE=0V

=250uA; VCE=VGE

600

2.5

GE(th)

5.0

200

CES

CE=0.8VCES

GE=0V;

;

=25^o

=125^o

GES

CE=0V; VGE=±20V

=IC90; VGE=15

±100

2.5

CE(sat)

中文翻译

下载PDF

与SG50N06T相关器件

型号	品牌	获取价格	描述	数据表
SG-51	EPSON	获取价格	FULL & HALF-SIZE DIP HIGH-FREQUENCY CRYSTAL OSCILLATOR
SG-510SCF2.0000MB0	SEIKO	获取价格	SG-510SCF2.0000MB0
SG-510SDF2.0000MC0	SEIKO	获取价格	SG-510SDF2.0000MC0
SG-510SDF48.0000MB0	SEIKO	获取价格	SG-510SDF48.0000MB0
SG-510SDF48.0000MC0	SEIKO	获取价格	SG-510SDF48.0000MC0
SG-510SEF48.0000MB0	SEIKO	获取价格	SG-510SEF48.0000MB0
SG51E-SERIES	ETC	获取价格	Peripheral IC
SG51H-SERIES	ETC	获取价格	Peripheral IC
SG51KH-SERIES	ETC	获取价格	Peripheral IC
SG51K-SERIES	ETC	获取价格	Peripheral IC