SEMiX452GB126HDs
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
IGBT
VCES
IC
1200
455
319
300
600
V
A
A
A
A
V
Tc = 25 °C
Tc = 80 °C
Tj = 150 °C
ICnom
ICRM
VGES
ICRM = 2xICnom
VCC = 600 V
-20 ... 20
SEMiX® 2s
Trench IGBT Modules
SEMiX452GB126HDs
Features
V
V
GE ≤ 20 V
CES ≤ 1200 V
Tj = 125 °C
tpsc
10
µs
°C
Tj
-40 ... 150
Inverse diode
Tc = 25 °C
Tc = 80 °C
IF
394
272
300
A
A
A
A
A
Tj = 150 °C
IFnom
IFRM
IFSM
Tj
IFRM = 2xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
600
1900
-40 ... 150
• Homogeneous Si
°C
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Module
It(RMS)
Tstg
Tterminal = 80 °C
600
-40 ... 125
4000
A
°C
V
Visol
AC sinus 50Hz, t = 1 min
Typical Applications*
• AC inverter drives
• UPS
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Unit
• Electronic Welding
Remarks
IC = 300 A
Tj = 25 °C
VCE(sat)
1.7
2.0
2.1
V
V
• Case temperatur limited to TC=125°C
max.
V
GE = 15 V
Tj = 125 °C
2.45
chiplevel
• Not for new design
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VCE0
rCE
1
1.2
1.1
3.0
4.5
6.5
0.3
V
V
m
m
V
mA
mA
nF
nF
nF
nC
0.9
2.3
3.7
5.8
0.1
VGE = 15 V
VGE(th)
ICES
VGE=VCE, IC = 12 mA
Tj = 25 °C
V
5
VGE = 0 V
CE = 1200 V
Tj = 125 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
21.5
1.13
0.98
2400
2.50
280
65
35
630
130
VCE = 25 V
GE = 0 V
V
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
ns
I
C = 300 A
ns
mJ
ns
V
GE = ±15 V
R
R
G on = 2
G off = 2
ns
Tj = 125 °C
Eoff
45
mJ
Rth(j-c)
per IGBT
0.083
K/W
GB
© by SEMIKRON
Rev. 1 – 23.03.2011
1