Datasheet > SBL30U100D-C

SBL30U100D-C

更新时间： 2024-11-13 01:20:27

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
2页	265K
描述
Low VF Trench Barrier Schottky Rectifier

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中文翻译

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SBL30U100D-C 数据手册

SBL30U100D

Voltage 100V 30.0 Amp

Low VF Trench Barrier Schottky Rectifier

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen free

FEATURES

TO-263

ꢀ

Trench Barrier Schottky technology

Low forward voltage drop, low power losses.

High current capability

High reliability

High surge current capability

Epitaxial construction

MECHANICAL DATA

ꢀ

Case: Molded plastic

Epoxy: UL94V-0 rate flame retardant

Lead: Lead solderable per MIL-STD-202

method 208 guaranteed

ꢀ

Polarity: As Marked

PACKAGE INFORMATION

Package

MPQ

Leader Size

Millimeter

REF.

TO-263

0.8K

13 inch

Min.

4.00

0.51

0.00

0.30

Max.

4.87

1.01

0.30

0.74

Min.

Max.

1.07

1.65

1.34 REF

8.0

9.65

ORDER INFORMATION

Part Number

2.54 REF

1.50 REF

2.5 REF

9.60 10.67

14.6

16.1

Type

Lead (Pb)-free

Lead (Pb)-free and Halogen-free

1.27 REF

SBL30U100D

SBL30U100D-C

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(Rating 25°C ambient temperature unless otherwise

specified. Single phase half wave, 60Hz, resistive or inductive load.For capacitive load, de-rate current by 20%.)

Parameter

Maximum Recurrent Peak Reverse Voltage

Working Peak Reverse Voltage

Symbol

V_RRM

Rating

100

Unit

V_RSM

Maximum DC Blocking Voltage

V_DC

(Per Leg)

Maximum Average Forward Rectified

Current

I_F

(Per Device)

Peak Forward Surge Current, 8.3 ms single half sine-wave

Superimposed on rated load (JEDEC method)

Voltage Rate of Chance (Rated V_R)

I_FSM

200

dv/dt

10000

V / µs

°C /W

°C

Typical Thermal Resistance

R_θ

Operating and Storage Temperature Range

T_J,T_STG

-40~150

ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Typ.

0.45

0.61

0.71

0.66

Max.

0.48

0.64

0.74

Unit

Test Condition

I_F=3A, T_J=25°C

I_F=10A, T_J=25°C

I_F=15A, T_J=25°C

I_F=15A, T_J=125°C

T_J=25°C

Maximum Instantaneous Forward Voltage

V_F

0.15

Maximum DC Reverse Current

at Rated DC Blocking Voltage ²

Typical Junction Capacitance ¹

I_R

T_J=100°C

C_J

630

Notes:

1. Measured at 1MHz and applied reverse voltage of 5.0V D.C.

2. Pulse Test: Pulse Width = 300 µs, Duty Cycle ≦ 2.0%.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

18-Dec-2017 Rev. A

Page 1 of 2

中文翻译

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与SBL30U100D-C相关器件

型号	品牌	获取价格	描述	数据表
SBL30U100F	SECOS	获取价格	Voltage 100V 30.0 Amp Low VF Trench MOS Barrier Schottky Rectifier
SBL30U120D	SECOS	获取价格	Low VF Trench Barrier Schottky Rectifier
SBL30U120D-C	SECOS	获取价格	Low VF Trench Barrier Schottky Rectifier
SBL30U150	SECOS	获取价格	Voltage 150V 30.0 Amp Low VF Trench MOS Barrier Schottky Rectifier
SBL30U150F	SECOS	获取价格	Voltage 150V 30.0 Amp Low VF Trench MOS Barrier Schottky Recifier
SBL30U200F	SECOS	获取价格	Low VF Trench Barrier Schottky Rectifier
SBL30U200F_15	SECOS	获取价格	Low VF Trench Barrier Schottky Rectifier
SBL30U45	SECOS	获取价格	Voltage 45V,30.0 Amp Low VF planar MOS Barrier Schottky Rectifier
SBL30U45F	SECOS	获取价格	Voltage 45V 30Amp Low VF planar MOS Barrier Schottky Rectifier
SBL30U60	SECOS	获取价格	Low VF Planar MOS Barrier Schottky Rectifier

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