Datasheet > SBL30U120D

SBL30U120D

更新时间： 2024-11-13 01:20:47

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SECOS		/
页数	文件大小	规格书
2页	260K
描述
Low VF Trench Barrier Schottky Rectifier

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中文翻译

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SBL30U120D 数据手册

SBL30U120D

30A, 120V

Low VF Trench Barrier Schottky Rectifier

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen free

TO-263

FEATURES

ꢀ

Trench Barrier Schottky technology

Low forward voltage drop

Low reverse current

High current capability

High reliability

High surge current capability

Epitaxial construction

MECHANICAL DATA

ꢀ

Case: Molded plastic

Epoxy: UL94V-0 rate flame retardant

Lead: Lead solderable per MIL-STD-202

method 208 guaranteed

ꢀ

Polarity: As Marked

Mounting position: Any

Millimeter

REF.

Min.

Max.

Min.

Max.

4.00

0.51

0.00

0.30

1.50 REF

2.5 REF

9.60 10.67

4.87

1.01

0.30

0.74

1.07

1.34 REF

8.0

2.54 REF

14.6

1.27 REF

1.65

ORDER INFORMATION

Part Number

9.65

16.1

Type

SBL30U120D

Lead (Pb)-free

SBL30U120D-C

Lead (Pb)-free and Halogen-free

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Rating 25°C ambient temperature unless otherwise

specified. Single phase half wave, 60Hz, resistive or inductive load. For capacitive load, de-rate current by 20%.)

Parameter

Maximum Recurrent Peak Reverse Voltage

Working Peak Reverse Voltage

Symbol

V_RRM

Rating

120

Unit

V_RSM

Maximum DC Blocking Voltage

V_DC

(Per Leg)

(Per Device)

Maximum Average Forward

Rectified Current

I_F

Peak Forward Surge Current@ 8.3 ms single half sine-wave

Superimposed on rated load (JEDEC method)

I_FSM

200

Voltage Rate of Chance (Rated V_R)

dv/dt

R_θJC

10000

V / µs

°C /W

°C

Typical Thermal Resistance from Junction to Case

Operating Junction and Storage Temperature Range

T_J, T_STG

-40~150

ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Typ.

Max.

Unit

Test Condition

I_F=3A, T_J=25°C

I_F=5A, T_J=25°C

I_F=15A, T_J=25°C

I_F=15A, T_J=125°C

T_J=25°C

0.49

0.55

0.8

0.65

0.52

0.58

0.84

Maximum Instantaneous

Forward Voltage

V_F

0.1

Maximum DC Reverse Current

at Rated DC Blocking Voltage ²

Typical Junction Capacitance ¹

I_R

T_J=100°C

C_J

470

Notes:

Measured at 1MHz and applied with 5.0V D.C reverse voltage.

Pulse Test: Pulse Width=300µs, duty cycle≦2.0%.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

13-Mar-2018 Rev. A

Page 1 of 2

中文翻译

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与SBL30U120D相关器件

型号	品牌	获取价格	描述	数据表
SBL30U120D-C	SECOS	获取价格	Low VF Trench Barrier Schottky Rectifier
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SBL30U200F	SECOS	获取价格	Low VF Trench Barrier Schottky Rectifier
SBL30U200F_15	SECOS	获取价格	Low VF Trench Barrier Schottky Rectifier
SBL30U45	SECOS	获取价格	Voltage 45V,30.0 Amp Low VF planar MOS Barrier Schottky Rectifier
SBL30U45F	SECOS	获取价格	Voltage 45V 30Amp Low VF planar MOS Barrier Schottky Rectifier
SBL30U60	SECOS	获取价格	Low VF Planar MOS Barrier Schottky Rectifier
SBL30U60_15	SECOS	获取价格	Low VF Planar MOS Barrier Schottky Rectifier
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