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SB16100DC-T3-LF PDF预览

SB16100DC-T3-LF

更新时间： 2024-11-05 20:04:07
品牌 Logo 应用领域
WTE 功效瞄准线二极管
页数 文件大小 规格书
4页 62K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 8A, 100V V(RRM), Silicon, TO-263AB, ROHS COMPLIANT, PLASTIC, TO-263, D2PAK-3

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SB16100DC-T3-LF 数据手册

 浏览型号SB16100DC-T3-LF的Datasheet PDF文件第2页浏览型号SB16100DC-T3-LF的Datasheet PDF文件第3页浏览型号SB16100DC-T3-LF的Datasheet PDF文件第4页 
WTE  
POWER SEMICONDUCTORS  
SB1620DC – SB16100DC  
16A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER  
Features  
ꢀ
Schottky Barrier Chip  
C
ꢀ
Guard Ring Die Construction for  
Transient Protection  
A
J
ꢀ
ꢀ
ꢀ
ꢀ
Low Forward Voltage Drop  
Low Power Loss, High Efficiency  
High Surge Current Capability  
For Use in Low Voltage, High Frequency  
Inverters, Free Wheeling, and Polarity  
Protection Applications  
B
D
E
PIN 1  
2
3
G
H
K
P
P
D2 PAK/TO-263  
Min  
Mechanical Data  
ꢀ
Dim  
Max  
10.40  
10.60  
4.80  
9.10  
—
Case: D2PAK/TO-263, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
A
B
C
D
E
G
H
J
9.80  
ꢀ
9.60  
4.40  
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Polarity: See Diagram  
Weight: 1.7 grams (approx.)  
Mounting Position: Any  
Marking: Type Number  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
PIN 1  
PIN 3  
8.50  
Case, PIN 2  
2.80  
1.00  
1.40  
0.90  
1.40  
0.70  
2.75  
—
1.20  
K
P
0.30  
2.35  
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
SB  
SB  
SB  
SB  
SB  
SB  
SB  
SB  
Characteristic  
Symbol  
Unit  
1620DC 1630DC 1640DC 1645DC 1650DC 1660DC 1680DC 16100DC  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
20  
14  
30  
21  
40  
28  
45  
32  
50  
35  
60  
42  
80  
56  
100  
70  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
V
A
Average Rectified Output Current @TC = 105°C  
16  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed  
on rated load (JEDEC Method)  
IFSM  
150  
A
Forward Voltage  
@IF = 8.0A  
VFM  
IRM  
0.55  
0.75  
0.85  
V
Peak Reverse Current  
@TA = 25°C  
1.0  
50  
mA  
At Rated DC Blocking Voltage @TA = 100°C  
Typical Junction Capacitance (Note 1)  
Typical Thermal Resistance (Note 2)  
Cj  
400  
2.0  
pF  
°C/W  
°C  
RθJC  
Operating and Storage Temperature Range  
Tj, TSTG  
-65 to +150  
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
2. Mounted on minimum recommended pad size on FR-4 board.  
SB1620DC – SB16100DC  
1 of 4  
© 2006 Won-Top Electronics  
1234

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