®
SB16150D – SB16200D
16A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
WON-TOP ELECTRONICS
Pb
Features
Schottky Barrier Chip
C
Guard Ring for Transient Protection
Low Forward Voltage Drop
A
J
Low Power Loss, High Efficiency
High Surge Current Capability
Epoxy Meet UL 94V-0 Classification
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Switching
Power Supplies
B
D
E
PIN 1
2
3
G
H
K
P
P
D2 PAK/TO-263
Mechanical Data
Dim
A
Min
9.80
9.60
4.40
8.50
—
Max
10.40
10.60
4.80
9.10
2.80
1.40
0.99
1.40
0.70
2.75
Case: D2PAK/TO-263, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
B
C
D
Polarity: See Diagram
Weight: 1.7 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
PIN 1
PIN 3
E
Case, PIN 2
G
H
1.00
—
J
1.20
0.30
2.35
K
P
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol
SB16150D
SB16200D
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
150
105
200
140
V
RMS Reverse Voltage
VR(RMS)
IO
V
A
Average Rectified Output Current
@TC = 100°C
16
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed on
Rated Load (JEDEC Method)
IFSM
VFM
150
A
V
Forward Voltage
@IF = 16A, TJ = 25°C
@IF = 16A, TJ = 125°C
0.92
0.82
Peak Reverse Current
At Rated DC Blocking Voltage
@TJ = 25°C
@TJ = 100°C
0.2
10
IRM
CJ
mA
pF
Typical Junction Capacitance (Note 1)
200
Thermal Resistance Junction to Ambient (Note 2)
Thermal Resistance Junction to Case (Note 2)
RθJA
RθJC
73
2.0
°C/W
°C
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Mounted on FR-4 PCB with minimum recommended pad size.
© Won-Top Electronics Co., Ltd.
Revision: September, 2012
www.wontop.com
1