5秒后页面跳转
SB16150D PDF预览

SB16150D

更新时间: 2024-11-26 14:55:31
品牌 Logo 应用领域
WON-TOP /
页数 文件大小 规格书
4页 42K
描述
SMD

SB16150D 数据手册

 浏览型号SB16150D的Datasheet PDF文件第2页浏览型号SB16150D的Datasheet PDF文件第3页浏览型号SB16150D的Datasheet PDF文件第4页 
®
SB16150D – SB16200D  
16A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER  
WON-TOP ELECTRONICS  
Features  
Schottky Barrier Chip  
C
Guard Ring for Transient Protection  
Low Forward Voltage Drop  
A
J
Low Power Loss, High Efficiency  
High Surge Current Capability  
Epoxy Meet UL 94V-0 Classification  
For Use in Low Voltage, High Frequency  
Inverters, Free Wheeling, and Switching  
Power Supplies  
B
D
E
PIN 1  
2
3
G
H
K
P
P
D2 PAK/TO-263  
Mechanical Data  
Dim  
A
Min  
9.80  
9.60  
4.40  
8.50  
Max  
10.40  
10.60  
4.80  
9.10  
2.80  
1.40  
0.99  
1.40  
0.70  
2.75  
Case: D2PAK/TO-263, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
B
C
D
Polarity: See Diagram  
Weight: 1.7 grams (approx.)  
Mounting Position: Any  
Marking: Type Number  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
PIN 1  
PIN 3  
E
Case, PIN 2  
G
H
1.00  
J
1.20  
0.30  
2.35  
K
P
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
SB16150D  
SB16200D  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
150  
105  
200  
140  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
V
A
Average Rectified Output Current  
@TC = 100°C  
16  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed on  
Rated Load (JEDEC Method)  
IFSM  
VFM  
150  
A
V
Forward Voltage  
@IF = 16A, TJ = 25°C  
@IF = 16A, TJ = 125°C  
0.92  
0.82  
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TJ = 25°C  
@TJ = 100°C  
0.2  
10  
IRM  
CJ  
mA  
pF  
Typical Junction Capacitance (Note 1)  
200  
Thermal Resistance Junction to Ambient (Note 2)  
Thermal Resistance Junction to Case (Note 2)  
RθJA  
RθJC  
73  
2.0  
°C/W  
°C  
Operating and Storage Temperature Range  
TJ, TSTG  
-55 to +150  
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
2. Mounted on FR-4 PCB with minimum recommended pad size.  
© Won-Top Electronics Co., Ltd.  
Revision: September, 2012  
www.wontop.com  
1

与SB16150D相关器件

型号 品牌 获取价格 描述 数据表
SB16150DC WTE

获取价格

16A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER
SB16150DC WON-TOP

获取价格

SMD
SB16150DC_08 WTE

获取价格

16A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER
SB16150DC-T3 WTE

获取价格

16A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER
SB16150DC-T3-LF WTE

获取价格

Rectifier Diode, Schottky, 1 Phase, 2 Element, 8A, 150V V(RRM), Silicon, TO-263AB, ROHS CO
SB16150F WON-TOP

获取价格

Powerpack
SB16150FCT WTE

获取价格

16A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER
SB16150FCT PACELEADER

获取价格

SCHOTTKY BARRIER RECTIFIER
SB16150FCT WON-TOP

获取价格

Powerpack
SB16150FCT_08 WTE

获取价格

16A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER