Datasheet > SB16150DC

SB16150DC

更新时间： 2024-11-26 14:54:59

品牌	Logo	应用领域
WON-TOP		/
页数	文件大小	规格书
4页	43K
描述
SMD

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

SB16150DC 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.76
Is Samacsys：	N	Base Number Matches：	1

SB16150DC 数据手册

SB16150DC – SB16200DC

16A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER

WON-TOP ELECTRONICS

Features



Low Forward Voltage



Epitaxial Construction with Oxide Passivation

Guard Ring for Transient and ESD Protection

Surge Overload Rating to 150A Peak

Low Power Loss, High Efficiency

Fast Switching

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Switching

Power Supplies

PIN 1

D²PAK/TO-263

Mechanical Data



Dim

Min

9.80

9.60

4.40

8.50

—

Max

10.40

10.60

4.80

9.10

2.80

1.40

0.99

1.40

0.70

2.75

Case: D²PAK/TO-263, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208



Polarity: See Diagram

Weight: 1.7 grams (approx.)

Mounting Position: Any

Marking: Type Number

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

PIN 1

PIN 3

Case, PIN 2

1.00

—

1.20

0.30

2.35

All Dimensions in mm

Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Characteristic

Symbol

SB16150DC

SB16200DC

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

150

105

200

140

RMS Reverse Voltage

VR(RMS)

Average Rectified Output Current

@T_C= 100°C

Total Device

Per Diode

8.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single Half Sine-Wave Superimposed on

Rated Load (JEDEC Method)

IFSM

VFM

150

Forward Voltage per diode @I_F= 8.0A, T_J= 25°C

@I_F= 8.0A, T_J= 125°C

0.92

0.82

Peak Reverse Current

At Rated DC Blocking Voltage

@T_J= 25°C

@T_J= 100°C

0.2

IRM

Typical Junction Capacitance (Note 1)

200

Thermal Resistance Junction to Ambient (Note 2)

Thermal Resistance Junction to Case (Note 2)

RθJA

RθJC

2.0

°C/W

°C

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

2. Mounted on FR-4 PCB with minimum recommended pad layout per diode.

Revision: September, 2012

www.wontop.com

12 3 4

中文翻译

下载PDF

与SB16150DC相关器件

型号	品牌	获取价格	描述	数据表
SB16150DC_08	WTE	获取价格	16A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER
SB16150DC-T3	WTE	获取价格	16A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER
SB16150DC-T3-LF	WTE	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 8A, 150V V(RRM), Silicon, TO-263AB, ROHS CO
SB16150F	WON-TOP	获取价格	Powerpack
SB16150FCT	WTE	获取价格	16A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER
SB16150FCT	PACELEADER	获取价格	SCHOTTKY BARRIER RECTIFIER
SB16150FCT	WON-TOP	获取价格	Powerpack
SB16150FCT_08	WTE	获取价格	16A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER
SB16150FCT-LF	WTE	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 8A, 150V V(RRM), Silicon, TO-220AB, ROHS CO
SB16150F-LF	WTE	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 16A, 150V V(RRM), Silicon, TO-220AC, ROHS C

与SB16150DC相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

41
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

33
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

61
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

57

产品中心

服务支持

精选活动

关于我们

帮助中心

SB16150DC

SB16150DC 技术参数

SB16150DC 数据手册

与SB16150DC相关器件

与SB16150DC相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SB16150DC

SB16150DC 技术参数

SB16150DC 数据手册

与SB16150DC相关器件

与SB16150DC相关文章

您还可以找

您在本页遇到什么问题？