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SB1100-1.3 PDF预览

SB1100-1.3

更新时间: 2024-02-05 22:32:21
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GSG 肖特基二极管
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描述
Chips for Schottky Diodes

SB1100-1.3 数据手册

  
SB 1XX - 1.3  
Chips for Schottky Diodes  
Chip Specification  
General Description:  
Schottky Diode chips with Mo-barrier for switch mode power  
rectifiers with the following features:  
* Guard-ring for stress protection  
* Extremely low forward voltage  
* 125 operation junction temperature  
* reverse avalanche behavior  
Mechanical Data:  
SB 1XX passivated Silicon Chip  
Demension(mm)  
Thickness:  
1,3x1,3  
350 +- 20 µm  
Metallization:  
Top ( Anode ) :  
Al Ag  
Bottom ( Cathode) : TiNiAg  
Forward Current(A)  
1 A  
Reverse Voltage (V):23, 43, 100 V  
Type  
Chip  
VR(V)  
VF(V)@25 C IRM@VRMM  
size(mm)  
1,3x1,3  
1,3x1,3  
1,3x1,3  
at If=1A  
at 25 C  
SB120  
SB140  
SB1100  
23 V  
43 V  
100 V  
380mV  
400mV  
650mV  
0,5mA  
0,5mA  
0,5mA  
Note: Other voltages, Vf & Top Metal AL are available  

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DO-41