Datasheet > SB1100-LF

SB1100-LF

更新时间： 2024-11-21 18:35:03

品牌	Logo	应用领域
WTE		瞄准线二极管
页数	文件大小	规格书
4页	60K
描述
Rectifier Diode, Schottky, 1 Element, 1A, 100V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2

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中文翻译

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SB1100-LF 数据手册

WTE

POWER SEMICONDUCTORS

SB120 – SB1100

1.0A SCHOTTKY BARRIER DIODE

Features

Schottky Barrier Chip

Guard Ring Die Construction for

Transient Protection

High Current Capability

Low Power Loss, High Efficiency

High Surge Current Capability

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

Protection Applications

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ D

Mechanical Data

DO-41

Dim

Min

25.4

4.06

0.71

2.00

Max

Case: DO-41, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 0.34 grams (approx.)

Mounting Position: Any

Marking: Type Number

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

—

5.21

0.864

2.72

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol SB120 SB130 SB140 SB150 SB160 SB180 SB1100 Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

RMS Reverse Voltage

V^R(RMS)

I^O

Average Rectified Output Current @T_L= 100°C

(Note 1)

1.0

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

I^FSM

Forward Voltage

@I_F= 1.0A

V^FM

I^RM

C^j

0.50

110

0.70

0.85

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

0.5

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 1)

Operating and Storage Temperature Range

R^ꢀ^JL

R^ꢀ^JA

°C/W

°C

T^j, T^STG

-65 to +150

Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

SB120 – SB1100

1 of 4

12 3 4

中文翻译

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与SB1100-LF相关器件

型号	品牌	获取价格	描述	数据表
SB1100S	PANJIT	获取价格	1 AMPERE SCHOTTKY BARRIER RECTIFIERS(VOLTAGE - 20 to 100 Volts CURRENT - 1.0 Ampere)
SB1100S	TRSYS	获取价格	1 AMPERE SCHOTTKY BARRIER RECTIFIERS
SB1100S	DIOTEC	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 100V V(RRM), Silicon, DO-204AC, DO-41, 2 PIN
SB1100S	CZSTARSEA	获取价格	A-405
SB1100SH	PANJIT	获取价格	SCHOTTKY BARRIER RECTIFIERS
SB1100-T	DIODES	获取价格	1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
SB1100-T/R	FRONTIER	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, Silicon
SB1100T26A	FAIRCHILD	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 100V V(RRM), Silicon, DO-41
SB1100T26R	FAIRCHILD	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 100V V(RRM), Silicon, DO-41
SB1100-T3	WTE	获取价格	1.0A SCHOTTKY BARRIER DIODE

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