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SB1100S PDF预览

SB1100S

更新时间: 2024-09-24 20:26:03
品牌 Logo 应用领域
德欧泰克 - DIOTEC 二极管
页数 文件大小 规格书
2页 87K
描述
Rectifier Diode, Schottky, 1 Element, 1A, 100V V(RRM), Silicon, DO-204AC, DO-41, 2 PIN

SB1100S 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:DO-41, 2 PIN
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.64Is Samacsys:N
其他特性:FREE WHEELING DIODE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-204AC
JESD-30 代码:O-PALF-W2元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-50 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:100 V表面贴装:NO
技术:SCHOTTKY端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SB1100S 数据手册

 浏览型号SB1100S的Datasheet PDF文件第2页 
SB120S ... SB1100S  
Version 2013-09-25  
SB120S ... SB1100S  
Schottky Barrier Rectifier Diodes  
Schottky-Barrier-Gleichrichterdioden  
Nominal current  
Nennstrom  
1 A  
Ø 2.6-0.1  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
20...100 V  
Plastic case  
~DO-41  
Kunststoffgehäuse  
~DO-204AC  
Weight approx.  
Gewicht ca.  
0.4 g  
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
Ø 0.77±0.07  
Standard packaging taped in ammo pack  
Standard Lieferform gegurtet in Ammo-Pack  
Dimensions - Maße [mm]  
Maximum ratings and Characteristics  
Grenz- und Kennwerte  
Type  
Typ  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
VRRM [V]  
Surge peak reverse voltage  
Stoßspitzensperrspannung  
VRSM [V]  
Forward voltage  
Durchlass-Spannung  
VF [V] 1)  
SB120S  
SB130S  
SB140S  
SB150S  
SB160S  
SB190S  
SB1100S  
20  
30  
20  
30  
< 0.45  
< 0.55  
< 0.60  
< 0.70  
< 0.70  
< 0.85  
< 0.85  
40  
40  
50  
50  
60  
60  
90  
90  
100  
100  
Max. average forward rectified current, R-load  
Dauergrenzstrom in Einwegschaltung mit R-Last  
TA = 75°C  
f > 15 Hz  
TA = 25°C  
TA = 25°C  
IFAV  
1 A2)  
10 A 2)  
30 A  
Repetitive peak forward current  
Periodischer Spitzenstrom  
IFRM  
IFSM  
i2t  
Peak forward surge current, 50 Hz half sine-wave  
Stoßstrom für eine 50 Hz Sinus-Halbwelle  
Rating for fusing, t < 10 ms  
Grenzlastintegral, t < 10 ms  
8 A2s  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
-50...+150°C  
-50...+175°C  
Tj  
TS  
1
2
IF = 1 A,Tj = 25°C  
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case  
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1
 
 

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