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SB1100-T PDF预览

SB1100-T

更新时间: 2024-11-21 04:05:51
品牌 Logo 应用领域
美台 - DIODES 整流二极管瞄准线高压
页数 文件大小 规格书
2页 60K
描述
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

SB1100-T 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-41
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80Factory Lead Time:14 weeks
风险等级:0.88Is Samacsys:N
其他特性:LOW POWER LOSS外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.8 V
JEDEC-95代码:DO-41JESD-30 代码:O-PALF-W2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:25 A元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-65 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:100 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子面层:Bright Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

SB1100-T 数据手册

 浏览型号SB1100-T的Datasheet PDF文件第2页 
SPICE MODELS: SB170 SB180 SB190 SB1100  
SB170 - SB1100  
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER  
Features  
·
·
·
·
·
·
Schottky Barrier Chip  
Guard Ring Die Construction for Transient Protection  
Ideally Suited for Automatic Assembly  
Low Power Loss, High Efficiency  
Surge Overload Rating to 25A Peak  
A
B
A
For Use in Low Voltage, High Frequency Inverters, Free  
Wheeling, and Polarity Protection Application  
·
·
High Temperature Soldering: 260°C/10 Second at Terminal  
Lead Free Finish, RoHS Compliant (Note 3)  
C
D
Mechanical Data  
·
·
Case: DO-41  
Case Material: Molded Plastic. UL Flammability Classification  
Rating 94V-0  
DO-41  
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
Dim  
A
Min  
25.4  
4.1  
Max  
¾
Terminals: Finish ¾ Bright Tin. Plated Leads - Solderable per  
MIL-STD-202, Method 208  
B
5.2  
·
·
·
·
·
Polarity: Cathode Band  
C
0.71  
2.0  
0.86  
2.7  
Mounting Position: Any  
D
Ordering Information: See Last Page  
Marking: Type Number  
All Dimensions in mm  
Weight: 0.3 grams (approximate)  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
SB170  
70  
SB180  
80  
SB190  
90  
SB1100  
100  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
49  
56  
63  
70  
V
A
Average Rectified Output Current  
@ TT = 85°C  
1.0  
25  
Non-Repetitive Peak Forward Surge Current 8.3ms  
single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
A
VFM  
IRM  
Forward Voltage @ IF = 1.0A  
@ TA  
=
25°C  
25°C  
0.80  
V
Peak Reverse Current  
at Rated DC Blocking Voltage  
@ TA  
@ TA = 100°C  
=
0.5  
10  
mA  
Cj  
Typical Junction Capacitance (Note 2)  
80  
15  
50  
pF  
K/W  
K/W  
°C  
RqJL  
Typical Thermal Resistance Junction to Lead  
Typical Thermal Resistance Junction to Ambient (Note 1)  
Operating and Storage Temperature Range  
RqJA  
Tj, TSTG  
-65 to +125  
Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.  
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.  
DS30116 Rev. 3 - 1  
1 of 2  
SB170 - SB1100  
www.diodes.com  
ã Diodes Incorporated  

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