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MBR1100RLG

更新时间： 2024-10-02 04:41:07
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管瞄准线PC
页数 文件大小 规格书
4页 59K
描述
Axial Lead Rectifier

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中文翻译

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MBR1100RLG 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：DO-41包装说明：LEAD FREE, PLASTIC, CASE 59-10, 2 PIN
针数：2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
Factory Lead Time：1 week风险等级：0.72
Samacsys Confidence：3Samacsys Status：Released
Samacsys PartID：224935Samacsys Pin Count：2
Samacsys Part Category：DiodeSamacsys Package Category：Diodes, Axial Diameter Horizontal Mounting
Samacsys Footprint Name：AXIAL-LEAD-CASE 59-10Samacsys Released Date：2016-03-17 18:36:43
Is Samacsys：N其他特性：FREE WHEELING DIODE, LOW POWER LOSS
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.79 VJEDEC-95代码：DO-41
JESD-30 代码：O-PALF-W2JESD-609代码：e3
最大非重复峰值正向电流：50 A元件数量：1
端子数量：2最高工作温度：175 °C
最低工作温度：-65 °C最大输出电流：1 A
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：260
认证状态：Not Qualified最大重复峰值反向电压：100 V
子类别：Rectifier Diodes表面贴装：NO
技术：SCHOTTKY端子面层：Tin (Sn)
端子形式：WIRE端子位置：AXIAL
处于峰值回流温度下的最长时间：40Base Number Matches：1

MBR1100RLG 数据手册

 浏览型号MBR1100RLG的Datasheet PDF文件第2页浏览型号MBR1100RLG的Datasheet PDF文件第3页浏览型号MBR1100RLG的Datasheet PDF文件第4页 
MBR1100  
Preferred Device  
Axial Lead Rectifier  
These rectifiers employ the Schottky Barrier principle in a large area  
metal−to−silicon power diode. State−of−the−art geometry features  
epitaxial construction with oxide passivation and metal overlap  
contact. Ideally suited for use as rectifiers in low−voltage,  
high−frequency inverters, free wheeling diodes, and polarity  
protection diodes.  
http://onsemi.com  
SCHOTTKY  
Features  
• Low Reverse Current  
BARRIER RECTIFIER  
1.0 AMPERE, 100 VOLTS  
• Low Stored Charge, Majority Carrier Conduction  
• Low Power Loss/High Efficiency  
• Highly Stable Oxide Passivated Junction  
• Guard−Ring for Stress Protection  
• Low Forward Voltage  
• 175°C Operating Junction Temperature  
• High Surge Capacity  
• These are Pb−Free Devices*  
DO−41  
AXIAL LEAD  
CASE 59  
Mechanical Characteristics:  
• Case: Epoxy, Molded  
• Weight: 0.4 Gram (Approximately)  
STYLE 1  
• Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
• Lead Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
MARKING DIAGRAM  
• Polarity: Cathode Indicated by Polarity Band  
A
MBR1100  
YYWW G  
G
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
V
100  
V
RRM  
RWM  
R
A
Y
= Assembly Location  
= Year  
WW = Work Week  
Average Rectified Forward Current  
I
1.0  
50  
A
A
O
G
= Pb−Free Package  
(V  
≤ 0.2 V (dc), R  
= 50°C/W,  
q
JA  
R(equiv)  
R
(Note: Microdot may be in either location)  
P.C. Board Mounting, [see Note 3], T = 120°C)  
A
Non−Repetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions  
Halfwave, Single Phase, 60 Hz)  
I
FSM  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
Operating and Storage Junction Temperature  
Range (Note 1)  
T , T  
−65 to  
+175  
°C  
J
stg  
MBR1100  
Axial Lead*  
Axial Lead*  
1000 Units/Bag  
1000 Units/Bag  
MBR1100G  
Voltage Rate of Change (Rated V )  
dv/dt  
10  
V/ns  
R
MBR1100RL  
Axial Lead* 5000/Tape & Reel  
Axial Lead* 5000/Tape & Reel  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
MBR1100RLG  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
1. The heat generated must be less than the thermal conductivity from  
Junction−to−Ambient: dP /dT < 1/R .  
q
JA  
D
J
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
June, 2006 − Rev. 6  
MBR1100/D  
 
1234

中文翻译

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MBR1100RLG 替代型号

型号 品牌 替代类型 描述 数据表
MBR1100G ONSEMI

完全替代

 Axial Lead Rectifier
MBR1100RL ONSEMI

类似代替

 SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE 100 VOLTS
MBR1100 ONSEMI

类似代替

 SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE 100 VOLTS

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