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S9013I-AP PDF预览

S9013I-AP

更新时间: 2024-11-20 18:10:23
品牌 Logo 应用领域
美微科 - MCC 晶体管
页数 文件大小 规格书
2页 143K
描述
500mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3

S9013I-AP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-92
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-3针数:3
Reach Compliance Code:compliant风险等级:5.65
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):190
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-W3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:MATTE TIN
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

S9013I-AP 数据手册

 浏览型号S9013I-AP的Datasheet PDF文件第2页 
M C C  
TM  
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S9013  
Micro Commercial Components  
Features  
TO-92 Plastic-Encapsulate Transistors  
Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.  
Collector-current 0.5A  
NPN Silicon  
Transistors  
Collector-base Voltage 40V  
Operating and storage junction temperature range: -55OC to +150OC  
Marking Code: S9013  
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0 and MSL Rating 1  
TO-92  
A
E
C
B
Electrical Characteristics @ 25OC UnlessEOtherwise Specified  
B
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Collector-Base Breakdown Voltage  
40  
25  
5.0  
---  
---  
---  
---  
---  
Vdc  
Vdc  
(I =100uAdc, IE=0)  
C
Collector-Emitter Breakdown Voltage  
(I =0.1mAdc, IB=0)  
C
Emitter-Base Breakdown Voltage  
---  
Vdc  
C
(I =100uAdc, IC=0)  
E
Collector Cutoff Current  
0.1  
0.1  
0.1  
uAdc  
uAdc  
uAdc  
(VCB=40Vdc, I =0)  
E
ICEO  
Collector Cutoff Current  
(VCE=20Vdc, I =0)  
B
IEBO  
Emitter Cutoff Current  
(VEB=5.0Vdc, I =0)  
C
D
ON CHARACTERISTICS  
hFE(1)  
DC Current Gain  
64  
40  
---  
---  
400  
---  
---  
---  
(I =50mAdc, VCE=1.0Vdc)  
C
hFE(2)  
DC Current Gain  
(I =500mAdc, VCE=1.0Vdc)  
C
VCE(sat)  
VBE(sat)  
Collector-Emitter Saturation Voltage  
0.6  
1.2  
Vdc  
Vdc  
(I =500mAdc, IB=50mAdc)  
C
G
Base-Emitter Saturation Voltage  
(I =500mAdc, IB=50mAdc)  
C
DIMENSIONS  
VEB  
Base- Emitter Voltage  
(I =100mAdc)  
E
---  
1.4  
Vdc  
INCHES  
MIN  
.170  
.170  
.550  
.010  
.130  
.096  
MM  
MIN  
DIM  
A
B
C
D
MAX  
MAX  
4.83  
4.83  
14.97  
0.56  
3.96  
2.64  
NOTE  
.190  
.190  
.590  
.020  
.160  
.104  
4.33  
4.30  
13.97  
0.36  
3.30  
2.44  
SMALL-SIGNAL CHARACTERISTICS  
fT  
Transistor Frequency  
(I =20mAdc, VCE=6.0Vdc, f=30MHz)  
C
150  
---  
MHz  
E
G
CLASSIFICATION OF HFE (1)  
Rank  
G
H
I
Range  
112-166  
144-202  
190-300  
www.mccsemi.com  
1 of 2  
Revision: 6  
2010/08/18  

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