S9013M

更新时间： 2024-11-18 08:55:39

品牌	Logo	应用领域
江苏长电/长晶 - CJ		晶体晶体管
页数	文件大小	规格书
3页	133K
描述
TRANSISTOR

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中文翻译

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数据手册

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S9013M 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD

WBFBP-03B Plastic-Encapsulate Transistors

S9013M

TRANSISTOR

DESCRIPTION

NPN Epitaxial Silicon Transistor

WBFBP-03B

(1.2×1.2×0.5)

unit: mm

TOP

FEATURES

High Collector Current. (I_C=500mA)

Complementary to S9012M

Excellent h_FElinearity.

1. BASE

2. EMITTER

3. COLLECTOR

APPLICATION

150mW Output Amplifier of Potable Radios in Class

B Push-pull Operation.

For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,

BACK

DVD-ROM,Note book PC, etc.)

MARKING: J3

B E

MAXIMUM RATINGS T_A=25℃ unless otherwise noted

Symbol

Parameter

Value

Units

V_CBO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

Collector Current -Continuous

Collector Dissipation

500

150

-55-150

℃

P_C

T_J

Junction Temperature

Storage Temperature

T_stg

℃

ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= 100µA, I_E=0

I_C=1mA, I_B=0

I_E=100µA I_C=0

V_CB=40 V,I_E=0

0.1

400

µA

Collector cut-off current

I_CEO

V_CE=20V,I_B=0

Emitter cut-off current

I_EBO

V_EB= 5V,I_C=0

h_FE1

V_CE=1V,I_C=50mA

V_CE=1V,I_C=500mA

I_C=500mA,I_B= 50mA

V_CE=6V, I_C= 20mA

f=30MHz

120

DC current gain

h_FE2

Collector-emitter saturation voltage

Base-emitter saturation voltage

_CE(sat)

_BE(sat)

0.6

1.2

Transition frequency

150

MHz

f_T

Collector output capacitance

C_ob

V_CB=6V,I_E=0,f=1MHz

12 3

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