Datasheet > S9013-SOT-23

S9013-SOT-23

更新时间： 2024-11-19 01:25:23

品牌	Logo	应用领域
海德 - HDSEMI		/
页数	文件大小	规格书
4页	2077K
描述
SOT-23 Plastic-Encapsulate Transistors

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中文翻译

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数据手册

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S9013-SOT-23 数据手册

S9013

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR( NP N )

Features

SOT- 23

●

High Collector Current.

● Complementary to S9012.

●

Excellent h_FELinearity.

Marking:

●

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

500

℃/W

℃

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

300

P_C

R_ΘJA

T_j

416

150

Storage Temperature

T_stg

-55～+150

℃

Electrical Characteristics (T=25℃ Unless otherwise specified）

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=0.1mA, I_E=0

I_C=1mA, I_B=0

I_E=0.1mA, I_C=0

V_CB=40V, I_E=0

0.1

400

Collector cut-off current

I_CEO

V_CE=20V, I_B=0

Emitter cut-off current

I_EBO

V_EB=5V, I_C=0

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE(sat)

V_BE

V_CE=1V, I_C=50mA

V_CE=1V, I_C=500mA

I_C=500mA, I_B=50mA

V_CB=1V,I_C=10mA,

V_CE=6V,I_C=20mA, f=30MHz

V_CB=6V, I_E=0, f=1MHz

120

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

0.6

1.2

0.7

Transition frequency

f_T

150

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE

RANK

RANGE

120-200

200-350

300-400

igh Diode Semiconductor

12 3 4

中文翻译

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