Datasheet > S9013T

S9013T

更新时间： 2024-11-18 08:55:39

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	97K
描述
NPN Epitaxial Silicon Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

S9013T 数据手册

S9013T

NPN Epitaxial Silicon Transistor

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

TO-92

4.55±0.2

3.5±±. 2

FEATURE

Power dissipation

P_{CM : 0.625 W Tamb=25 C}

Collector current

CM:

0.5

Collector-base voltage

_(BR)CBO: 40 V

Operating and storage junction temperature range

-55 to +150 C

+±.±8

–±.±7

±.43

46^+±.1

±.

–±.1

(1.27 Typ.)

1: Emitter

2: Base

3: Collector

1.25⁺–±^±.^.2²

stg:

Tj, T

2.54±±. 1

ELECTRICAL CHARACTERISTICS˄Tamb=25ć

unless otherwise specified˅

Parameter

Symbol

V(BR)_CBO

V(BR)_CEO

V(BR)_EBO

I_CBO

Test conditions

Ic= 100A ˈ I_E=0

I_C= 1 mA , I_B=0

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E= 100Aˈ I_C=0

V_CB= 40V , I_E=0

V_CE=20V , I_E=0

0.1

300

Collector cut-off current

I_CEO

Emitter cut-off current

I_EBO

V_EB= 5V, I_C=0

h_FE(1)

V_CE=1V, I_C=50mA

V_CE=1V, I_C= 500mA

I_C= 500 mA, I_B= 50mA

DC current gain

h_FE(2)

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE(sat)

0.6

1.2

V_CE=6V,I_C=20mA,

f=30MHz

Transition frequency

150

MHz

f _T

CLASSIFICATION OF h_FE(1)

Rank

Range

64-91

78-112

96-135

112-166

144-202

190-300

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 2

中文翻译

下载PDF

与S9013T相关器件

型号	品牌	获取价格	描述	数据表
S9013-TO-92	HDSEMI	获取价格	TO-92 Plastic-Encapsulate Transistors
S9013W	SECOS	获取价格	0.5A , 40V NPN Plastic Encapsulated Transistor
S9013W	BL Galaxy Electrical	获取价格	NPN Silicon Epitaxial Planar Transistor
S9013W	HTSEMI	获取价格	TRANSISTOR(NPN)
S9013W	CJ	获取价格	SOT-323
S9013W	HOTTECH	获取价格	SOT-323
S9013WH	CJ	获取价格	Transistor
S9013WJ	CJ	获取价格	Transistor
S9013WL	CJ	获取价格	Transistor
S9013W-SOT-323	HDSEMI	获取价格	SOT-323 Plastic-Encapsulate Transistors