Datasheet > S9013W

S9013W

更新时间： 2024-11-21 11:57:35

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管
页数	文件大小	规格书
1页	436K
描述
TRANSISTOR(NPN)

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中文翻译

获取价格

数据手册

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S9013W 数据手册

S9013W

TRANSISTOR(NPN)

SOT–323

FEATURES

 High Collector Current

 Excellent H_FELinearity

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

1. BASE

Collector-Base Voltage

2. EMITTER

3. COLLECTOR

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

500

℃/W

℃

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

200

P_C

625

R_ΘJA

T_j

150

Storage Temperature

T_stg

-55～+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

V_(BR)CBO

I_C=100µA, I_E=0

Collector-base breakdown voltage

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=1mA, I_B=0

I_E=100µA, I_C=0

V_CB=40V, I_E=0

V_CE=20V, I_B=0

V_EB=5V, I_C=0

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

100

400

0.6

I_CEO

Collector cut-off current

I_EBO

Emitter cut-off current

h_FE

V_CE=1V, I_C=50mA

120

150

DC current gain

V_CE(sat)

V_BE(sat)

V_BE

I_C=500mA, I_B=50mA

V_CE=1V, I_C=10mA

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

1.2

0.7

f_T

V_CE=6V,I_C=20mA , f=30MHz

V_CB=6V, I_E=0, f=1MHz

MHz

Transition frequency

C_ob

Collector output capacitance

CLASSIFICATION OF h_FE

RANK

RANGE

200–350

120–200

300–400

MARKING

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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