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S72WS256ND0KFWD33 PDF预览

S72WS256ND0KFWD33

更新时间： 2024-01-29 17:06:57
品牌 Logo 应用领域
飞索 - SPANSION 动态存储器内存集成电路
页数 文件大小 规格书
28页 1252K
描述
Memory Circuit, 16MX16, CMOS, PBGA160, 15 X 15 MM, 1.25 MM HEIGHT, LEAD FREE, FBGA-160

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S72WS256ND0KFWD33 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：BGA包装说明：LFBGA,
针数：160Reach Compliance Code：compliant
HTS代码：8542.32.00.71风险等级：5.82
其他特性：MOBILE SDRAM IS ORGANIZED AS 2M X 16BIT X 4 BANKS; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLEJESD-30 代码：S-PBGA-B160
JESD-609代码：e1长度：15 mm
内存密度：268435456 bit内存集成电路类型：MEMORY CIRCUIT
内存宽度：16功能数量：1
端子数量：160字数：16777216 words
字数代码：16000000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-25 °C
组织：16MX16封装主体材料：PLASTIC/EPOXY
封装代码：LFBGA封装形状：SQUARE
封装形式：GRID ARRAY, LOW PROFILE, FINE PITCH峰值回流温度（摄氏度）：260
认证状态：Not Qualified座面最大高度：1.25 mm
最大供电电压 (Vsup)：1.95 V最小供电电压 (Vsup)：1.7 V
标称供电电压 (Vsup)：1.8 V表面贴装：YES
技术：CMOS温度等级：OTHER
端子面层：TIN SILVER COPPER端子形式：BALL
端子节距：0.65 mm端子位置：BOTTOM
处于峰值回流温度下的最长时间：40宽度：15 mm

S72WS256ND0KFWD33 数据手册

 浏览型号S72WS256ND0KFWD33的Datasheet PDF文件第1页浏览型号S72WS256ND0KFWD33的Datasheet PDF文件第2页浏览型号S72WS256ND0KFWD33的Datasheet PDF文件第4页浏览型号S72WS256ND0KFWD33的Datasheet PDF文件第5页浏览型号S72WS256ND0KFWD33的Datasheet PDF文件第6页浏览型号S72WS256ND0KFWD33的Datasheet PDF文件第7页 
S72WS-N Based MCP/PoP Products  
1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus  
256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory  
512 Mb NAND Flash  
1024 Mb NAND Interface ORNAND Flash Memory on Bus 1  
512/256/128 Mb (8M/4M/2M x 16-bit x 4 Banks) Mobile SDRAM on  
Bus 2  
Data Sheet (Advance Information)  
Features  
„ Power supply voltage of 1.7 to 1.95V  
„ Package:  
High Performance  
„ Flash access time: 80 ns for NOR Flash, 25 ns for ORNAND  
– 9.0 x 12.0 mm MCP BGA  
– 11.0 x 13.0 mm MCP BGA  
– 15.0 x 15.0 x 1.2 mm MCP Package-on-Package (PoP)  
Flash  
„ Flash burst frequencies: 54 MHz, 66MHz, 80MHz  
„ Operating Temperature  
„ Mobile SDRAM burst frequency: 104 MHz, 133 MHz (DDR)  
– –25°C to +85°C (wireless)  
General Description  
The S72WS series is a product line of stacked Multi-Chip Product (MCP) packages and consists of:  
„ One or two NOR flash memory dies  
„ One NAND Interface ORNAND die  
„ Separate bus for one or more Mobile SDRAM die  
The products covered by this document are listed in the table below.  
NOR Flash Density  
NAND Flash Density  
1024Mb 512Mb  
SDRAM Density  
256Mb  
Device  
512Mb  
256Mb  
128Mb  
512Mb  
128Mb  
S72WS256ND0  
S72WS256NDE  
S72WS256NEE  
S72WS512NFG  
S72WS512NEG  
S72WS512NEF  
S72WS512NFF  
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
Note  
For a list of PoP OPNs, please contact the local sales representative or refer to the valid combinations tables.  
For detailed specifications, please refer to the individual data sheets.  
Document  
Publication Identification Number (PID)  
S29WS-N_00  
S30MS-P_00  
SDRAM_01  
S29WS256N  
S30MS01GP/512P  
128 Mb Mobile SDRAM Type 1  
128 Mb Mobile SDRAM Type 2  
128 Mb Mobile DDR-DRAM Type 5  
256 Mb Mobile SDRAM Type 2  
512 Mb Mobile DDR-DRAM Type 1  
512 Mb Mobile SDRAM Type 4  
512 Mb NAND Type 1  
SDRAM_05  
SDRAM_07  
SDRAM_05  
SDRAM_09  
SDRAM_06  
NAND_01  
512 Mb Mobile DDR-DRAM Type 5  
512 Mb Mobile DDR-DRAM Type 2  
DRAM_04  
DRAM_05  
Publication Number S72WS-N_00  
Revision A  
Amendment 9  
Issue Date May 8, 2007  
This document contains information on one or more products under development at Spansion Inc. The information is intended to help you evaluate this product. Do not design in  
this product without contacting the factory. Spansion Inc. reserves the right to change or discontinue work on this proposed product without notice.  
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