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S72WS256NEEBAWU72 PDF预览

S72WS256NEEBAWU72

更新时间: 2024-02-09 04:32:03
品牌 Logo 应用领域
飞索 - SPANSION 动态存储器内存集成电路
页数 文件大小 规格书
28页 1252K
描述
Memory Circuit, 16MX16, CMOS, PBGA137, 9 X 12 MM, 1.40 MM HEIGHT, LEAD FREE COMPLIANT, FBGA-137

S72WS256NEEBAWU72 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FBGA, BGA137,10X14,32Reach Compliance Code:compliant
风险等级:5.84最长访问时间:70 ns
JESD-30 代码:R-PBGA-B137内存集成电路类型:MEMORY CIRCUIT
混合内存类型:FLASH+SDRAM端子数量:137
最高工作温度:85 °C最低工作温度:-25 °C
封装主体材料:PLASTIC/EPOXY封装代码:FBGA
封装等效代码:BGA137,10X14,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, FINE PITCH电源:1.8 V
认证状态:Not Qualified最大待机电流:0.00004 A
子类别:Other Memory ICs最大压摆率:0.06 mA
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM

S72WS256NEEBAWU72 数据手册

 浏览型号S72WS256NEEBAWU72的Datasheet PDF文件第2页浏览型号S72WS256NEEBAWU72的Datasheet PDF文件第3页浏览型号S72WS256NEEBAWU72的Datasheet PDF文件第4页浏览型号S72WS256NEEBAWU72的Datasheet PDF文件第5页浏览型号S72WS256NEEBAWU72的Datasheet PDF文件第6页浏览型号S72WS256NEEBAWU72的Datasheet PDF文件第7页 
S72WS-N Based MCP/PoP Products  
1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus  
256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory  
512 Mb NAND Flash  
1024 Mb NAND Interface ORNAND Flash Memory on Bus 1  
512/256/128 Mb (8M/4M/2M x 16-bit x 4 Banks) Mobile SDRAM on  
Bus 2  
S72WS-N Based MCP/PoP Products Cover Sheet  
Data Sheet (Advance Information)  
Notice to Readers: This document states the current technical specifications regarding the Spansion  
product(s) described herein. Each product described herein may be designated as Advance Information,  
Preliminary, or Full Production. See Notice On Data Sheet Designations for definitions.  
Publication Number S72WS-N_00  
Revision A  
Amendment 9  
Issue Date May 8, 2007  

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