是否Rohs认证: | 符合 | 生命周期: | Transferred |
零件包装代码: | BGA | 包装说明: | 7 X 9 MM, 1.20 MM HEIGHT, LEAD FREE, HALOGEN FREE, FBGA-56 |
针数: | 56 | Reach Compliance Code: | unknown |
HTS代码: | 8542.32.00.71 | 风险等级: | 5.07 |
Is Samacsys: | N | 最长访问时间: | 90 ns |
其他特性: | PSRAM IS ORGANIZED AS 1M X 16 | JESD-30 代码: | R-PBGA-B56 |
JESD-609代码: | e1 | 长度: | 9 mm |
内存密度: | 67108864 bit | 内存集成电路类型: | MEMORY CIRCUIT |
内存宽度: | 16 | 混合内存类型: | FLASH+SRAM |
湿度敏感等级: | 3 | 功能数量: | 1 |
端子数量: | 56 | 字数: | 4194304 words |
字数代码: | 4000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -25 °C |
组织: | 4MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TFBGA | 封装等效代码: | BGA56,8X8,32 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH |
电源: | 3 V | 认证状态: | Not Qualified |
座面最大高度: | 1.2 mm | 子类别: | Other Memory ICs |
最大供电电压 (Vsup): | 3.1 V | 最小供电电压 (Vsup): | 2.7 V |
标称供电电压 (Vsup): | 3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | OTHER |
端子面层: | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
宽度: | 7 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
S71GL064NA0BHWOF0 | CYPRESS |
获取价格 |
Memory IC, | |
S71GL064NA0BHWOF2 | CYPRESS |
获取价格 |
Memory IC, | |
S71GL064NA0BHWOF3 | CYPRESS |
获取价格 |
Memory IC, | |
S71GL064NB0 | SPANSION |
获取价格 |
Stacked Multi-Chip Product (MCP) Flash Memory and RAM | |
S71GL064NB0-0U | SPANSION |
获取价格 |
Stacked Multi-Chip Product (MCP) Flash Memory and RAM | |
S71GL064NB0-0Z | SPANSION |
获取价格 |
Stacked Multi-Chip Product (MCP) Flash Memory and RAM | |
S71GL064NB0BFW0K0 | CYPRESS |
获取价格 |
Memory Circuit, Flash+PSRAM, CMOS, PBGA56, | |
S71GL064NB0BFW0K2 | CYPRESS |
获取价格 |
Memory Circuit, Flash+PSRAM, CMOS, PBGA56, | |
S71GL064NB0BFW0K3 | CYPRESS |
获取价格 |
Memory Circuit, Flash+PSRAM, CMOS, PBGA56, | |
S71GL064NB0BFW0P0 | CYPRESS |
获取价格 |
Memory Circuit, Flash+PSRAM, CMOS, PBGA56, |