Datasheet > S300J

S300J

更新时间： 2024-11-10 01:19:07

品牌	Logo	应用领域
GENESIC		/
页数	文件大小	规格书
3页	643K
描述
Silicon Standard Recovery Diode

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中文翻译

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数据手册
替代型号

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S300J 数据手册

S300B thru S300JR

V_RRM= 100 V - 600 V

I_F= 300 A

Silicon Standard

Recovery Diode

Features

• High Surge Capability

• Types up to 600 V V_RRM

• Not ESD Sensitive

DO-9 Package

Note:

1. Standard polarity: Stud is cathode.

2. Reverse polarity (R): Stud is anode.

3. Stud is base.

Maximum ratings, at T_j= 25 °C, unless otherwise specified ("R" devices have leads reversed)

Conditions

S300J (R)

Parameter

Symbol

S300B (R)

S300D (R)

S300E (R) S300G (R)

Unit

Repetitive peak reverse

voltage

V_RRM

600

100

200

300

400

V_RMS

V_DC

420

600

RMS reverse voltage

DC blocking voltage

140

200

212

300

280

400

100

Continuous forward

current

T_C≤ 130 °C

I_F

300

Surge non-repetitive

forward current, Half Sine

Wave

I_F,SM

T_C= 25 °C, t_p= 8.3 ms

6850

T_j

-55 to 150

Operating temperature

-55 to 150

°C

T_stg

Storage temperature

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Conditions

S300J (R)

Parameter

Symbol

S300B (R)

S300D (R)

S300E (R) S300G (R)

Unit

V_F

I_R

I_F= 300 A, T_j= 25 °C

V_R= 100 V, T_j= 25 °C

V_R= 100 V, T_j= 175 °C

1.2

Diode forward voltage

Reverse current

1.2

μA

Thermal characteristics

Thermal resistance,

junction - case

R_thJC

0.16

°C/W

www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/

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中文翻译

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S300J 替代型号

型号	品牌	替代类型	描述	数据表
NTE6102	NTE	功能相似	Industrial Rectifier, 550A

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