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S300YR PDF预览

S300YR

更新时间: 2024-11-08 01:11:59
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GENESIC /
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3页 662K
描述
Silicon Standard Recovery Diode

S300YR 数据手册

 浏览型号S300YR的Datasheet PDF文件第2页浏览型号S300YR的Datasheet PDF文件第3页 
S300Y thru S300ZR  
VRRM = 1600 V - 2000 V  
IF =300 A  
Silicon Standard  
Recovery Diode  
Features  
• High Surge Capability  
• Types from 1600 V to 2000 V VRRM  
DO-9 Package  
• Not ESD Sensitive  
Note:  
1. Standard polarity: Stud is cathode.  
2. Reverse polarity (R): Stud is anode.  
3. Stud is base.  
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)  
Conditions  
S300Y (R)  
S300Z (R)  
Parameter  
Symbol  
Unit  
VRRM  
VRMS  
VDC  
IF  
1600  
1131  
1600  
300  
2000  
1414  
2000  
300  
Repetitive peak reverse voltage  
RMS reverse voltage  
V
V
V
A
DC blocking voltage  
TC ≤ 130 °C  
Continuous forward current  
Surge non-repetitive forward  
current, Half Sine Wave  
IF,SM  
TC = 25 °C, tp = 8.3 ms  
6850  
6850  
A
Tj  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
Operating temperature  
Storage temperature  
°C  
°C  
Tstg  
Electrical characteristics, at Tj = 25 °C, unless otherwise specified  
Conditions  
S300Y (R)  
S300Z (R)  
Parameter  
Symbol  
Unit  
VF  
IR  
IF = 300 A, Tj = 25 °C  
VR = 1600 V, Tj = 25 °C  
VR = 1600 V, Tj = 175 °C  
1.2  
10  
12  
1.2  
10  
12  
V
Diode forward voltage  
Reverse current  
μA  
mA  
Thermal characteristics  
Thermal resistance, junction -  
case  
RthJC  
0.16  
0.16  
°C/W  
1
Feb 2016  
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/  

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