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S-LBAV199LT1G PDF预览

S-LBAV199LT1G

更新时间: 2024-10-29 02:49:23
品牌 Logo 应用领域
雷卯电子 - LEIDITECH 光电二极管
页数 文件大小 规格书
3页 360K
描述
Surface Mount Low Leakge Diode

S-LBAV199LT1G 数据手册

 浏览型号S-LBAV199LT1G的Datasheet PDF文件第2页浏览型号S-LBAV199LT1G的Datasheet PDF文件第3页 
LBAV199LT1G  
Surface Mount Low Leakge Diode  
FEATURE  
MECHANICAL DATA  
·
·
Case: SOT-23  
·
·
·
·
·
Ultra-Small Surface Mount Package  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Very Low Leakage Current  
Lead Free/RoHS Compliant (Note 2)  
Qualified to AEC-Q101 Standards for High Reliability  
·
·
·
Moisture sensitivity: Level 1 per J-STD-020C  
Terminals: Solderable per MIL-STD-202, Method 208  
We declare that the material of product compliance  
with RoHS reuq irements.  
Lead Free Plating (Matte Tin Finish annealed over Alloy 42  
leadframe).  
z
S- Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC-Q101  
Qualified and PPAP Capable.  
·
Weight: 0.002 grams (approx.)  
DEVICE MARKING ORDERING INFORMATION  
Shipping  
Marking  
K50  
Device  
LBAS116LT1G  
S-LBAS116LT1G  
3000 Tape & Reel  
10000 Tape & Reel  
SOT–23  
LBAS116LT3G  
S-LBAS116LT3G  
K50  
53  
LBAW156LT1G  
S-LBAW156LT1G  
3000 Tape & Reel  
10000 Tape & Reel  
LBAW156LT3G  
53  
S-LBAW156LT3G  
LBAV170LT1G  
LBAW156LT1G  
LBAS116LT1G  
51  
51  
52  
52  
3000 Tape & Reel  
10000 Tape & Reel  
3000 Tape & Reel  
10000 Tape & Reel  
S-LBAV170LT1G  
LBAV170LT3G  
S-LBAV170LT3G  
LBAV199LT1G  
S-LBAV199LT1G  
LBAV199LT3G  
S-LBAV199LT3G  
LBAV199LT1G  
LBAV170LT1G  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
Value  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
85  
VR(RMS)  
RMS Reverse Voltage  
60  
V
Forward Continuous Current (Note 1)  
Single Diode  
Double Diode  
215  
125  
IFM  
mA  
mA  
IFRM  
Repetitive Peak Forward Current  
500  
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms  
4.0  
1.0  
0.5  
IFSM  
A
@ t = 1.0ms  
@ t = 1.0s  
Pd  
Power Dissipation (Note 1)  
150  
833  
mW  
°C/W  
°C  
RqJA  
Thermal Resistance Junction to Ambient Air (Note 1)  
Operating and Storage Temperature Range  
Tj , TSTG  
-65 to +150  
Notes: 1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at  
http://www.diodes.com/datasheets/ap02001.pdf.  
2. No purposefully added lead.  
1/3  
Rev :01.06.2018  
www.leiditech.com  

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