LESHAN RADIO COMPANY, LTD.
LBC817-16LT1G
LBC817-25LT1G
GeneralPurposeTransistors
LBC817-40LT1G
S-LBC817-16LT1G
NPNSilicon
S-LBC817-25LT1G
S-LBC817-40LT1G
We declare that the material of product compliance with RoHS requirements.
•
•
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
3
MAXIMUM RATINGS
Rating
Symbol
V CEO
V CBO
V EBO
I C
Value
45
Unit
V
1
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
2
50
V
SOT–23
5.0
V
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
3
COLLECTOR
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
P D
1
BASE
225
1.8
mW
mW/°C
°C/W
Derate above 25°C
2
Thermal Resistance, Junction to Ambient
Total Device Dissipation
R θJA
P D
556
EMITTER
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
300
2.4
mW
mW/°C
°C/W
°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R θJA
417
T J , T stg
–55 to +150
DEVICE MARKING
LBC817–16LT1G = 6A; LBC817–25LT1G = 6B; LBC817–40LT1G = 6C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA)
V (BR)CEO
45
50
—
—
—
—
—
—
V
V
V
Collector–Emitter Breakdown Voltage
(VEB = 0, IC = 10 µA)
V (BR)CES
Emitter–Base Breakdown Voltage
(I E = 1.0 µA)
V (BR)EBO
I CBO
5.0
Collector Cutoff Current
(VCB = 20 V)
—
—
—
—
100
5.0
nA
(VCB = 20 V, TA = 150°C)
µA
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Rev.O 1/10