LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
LBC847ATT1G
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−89 package which is designed
for low power surface mount applications.
Features
S-LBC847ATT1G
Series
• Pb−Free Packages are Available
• S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
MAXIMUM RATINGS (T = 25°C)
A
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Max
45
Unit
V
V
CEO
V
CBO
V
EBO
SC-89
50
V
6.0
100
V
3
Collector Current − Continuous
I
C
mAdc
COLLECTOR
1
BASE
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
2
EMITTER
Total Device Dissipation,
FR−4 Board (Note 1)
P
D
200
mW
T = 25°C
A
Derated above 25°C
1.6
mW/°C
°C/W
Thermal Resistance,
R
600
q
JA
Junction−to−Ambient (Note 1)
Total Device Dissipation,
FR−4 Board (Note 2)
P
D
300
mW
T = 25°C
A
Derated above 25°C
2.4
mW/°C
°C/W
Thermal Resistance,
R
400
q
JA
Junction−to−Ambient (Note 2)
Junction and Storage
Temperature Range
T , T
−55 to
+150
°C
J
stg
1. FR−4 @ min pad.
2. FR−4 @ 1.0 × 1.0 in pad.
ORDERING INFORMATION
†
Device
Marking
Package
Shipping
LBC847ATT1G
1E
1F
1G
SC−89
SC−89
SC−89
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
S-LBC847ATT1G
LBC847BTT1G
S-LBC847BTT1G
LBC847CTT1G
S-LBC847CTT1G
Rev.O 1/5