Datasheet > S-LBC858BLT1G

S-LBC858BLT1G

更新时间： 2022-05-14 22:14:20

品牌	Logo	应用领域
雷卯电子 - LEIDITECH		/
页数	文件大小	规格书
7页	666K
描述
General Purpose Transistors PNP Silicon

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S-LBC858BLT1G 数据手册

LBC857CLT1G

Series

S-LBC857CLT1G

Series

General Purpose Transistors

PNP Silicon

• ^{Moisture Sensitivity Level: 1}

SOT–23

• ^{ESD Rating – Human Body Model: >4000 V}

ESD Rating – Machine Model: >400 V

•

We declare that the material of product compliance with

RoHS requirements.

• ^{S- Prefix for Automotive and Other Applications Requiring}

Unique Site and Control Change Requirements; AEC-Q101

Qualified and PPAP Capable.

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

LBC856

LBC857

CEO

CBO

EBO

–65

–45

–30

COLLECTOR

LBC858, LBC859

Collector-Base Voltage

LBC856

LBC857

–80

–50

–30

BASE

LBC858, LBC859

Emitter–Base Voltage

–5.0

EMITTER

Collector Current – Continuous

THERMAL CHARACTERISTICS

Characteristic

–100

mAdc

MARKING DIAGRAM

Symbol

Max

Unit

Total Device Dissipation FR–5 Board,

(Note 1.) T = 25°C

225

1.8

mW/°C

Derate above 25°C

Thermal Resistance,

Junction to Ambient

556

°C/W

qJA

xx= Device Marking

(See Table Below)

Total Device Dissipation Alumina

Substrate, (Note 2.) T = 25°C

Derate above 25°C

300

2.4

mW/°C

Thermal Resistance,

Junction to Ambient

417

°C/W

qJA

Junction and Storage Temperature

T , T

J stg

–55 to

+150

°C

1. FR–5 = 1.0 x 0.75 x 0.062 in

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

01.06.2015

1/7

Rev :

www.leiditech.com

12 3 4 5 6 7

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