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S-LBC857ALT1G PDF预览

S-LBC857ALT1G

更新时间: 2024-10-29 02:46:31
品牌 Logo 应用领域
雷卯电子 - LEIDITECH /
页数 文件大小 规格书
7页 666K
描述
General Purpose Transistors PNP Silicon

S-LBC857ALT1G 数据手册

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LBC857CLT1G  
Series  
S-LBC857CLT1G  
Series  
General Purpose Transistors  
PNP Silicon  
Moisture Sensitivity Level: 1  
SOT–23  
ESD Rating – Human Body Model: >4000 V  
ESD Rating – Machine Model: >400 V  
We declare that the material of product compliance with  
RoHS requirements.  
3
S- Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC-Q101  
Qualified and PPAP Capable.  
2
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
1
Rating  
Symbol  
Value  
Unit  
Collector-Emitter Voltage  
LBC856  
LBC857  
V
CEO  
V
CBO  
V
EBO  
–65  
–45  
–30  
V
3
COLLECTOR  
LBC858, LBC859  
Collector-Base Voltage  
LBC856  
LBC857  
–80  
–50  
–30  
V
1
BASE  
LBC858, LBC859  
2
Emitter–Base Voltage  
–5.0  
V
EMITTER  
Collector Current – Continuous  
THERMAL CHARACTERISTICS  
Characteristic  
I
–100  
mAdc  
C
MARKING DIAGRAM  
Symbol  
Max  
Unit  
3
Total Device Dissipation FR–5 Board,  
P
D
(Note 1.) T = 25°C  
225  
1.8  
mW  
mW/°C  
A
Derate above 25°C  
xx  
Thermal Resistance,  
Junction to Ambient  
R
R
556  
°C/W  
qJA  
2
1
xx= Device Marking  
(See Table Below)  
Total Device Dissipation Alumina  
Substrate, (Note 2.) T = 25°C  
Derate above 25°C  
P
D
300  
2.4  
mW  
mW/°C  
A
Thermal Resistance,  
Junction to Ambient  
417  
°C/W  
qJA  
Junction and Storage Temperature  
T , T  
J stg  
–55 to  
+150  
°C  
1. FR–5 = 1.0 x 0.75 x 0.062 in  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
01.06.2015  
1/7  
Rev :  
www.leiditech.com  

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