LBC857CLT1G
Series
S-LBC857CLT1G
Series
General Purpose Transistors
PNP Silicon
• Moisture Sensitivity Level: 1
SOT–23
• ESD Rating – Human Body Model: >4000 V
ESD Rating – Machine Model: >400 V
•
We declare that the material of product compliance with
RoHS requirements.
3
• S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
2
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
1
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
LBC856
LBC857
V
CEO
V
CBO
V
EBO
–65
–45
–30
V
3
COLLECTOR
LBC858, LBC859
Collector-Base Voltage
LBC856
LBC857
–80
–50
–30
V
1
BASE
LBC858, LBC859
2
Emitter–Base Voltage
–5.0
V
EMITTER
Collector Current – Continuous
THERMAL CHARACTERISTICS
Characteristic
I
–100
mAdc
C
MARKING DIAGRAM
Symbol
Max
Unit
3
Total Device Dissipation FR–5 Board,
P
D
(Note 1.) T = 25°C
225
1.8
mW
mW/°C
A
Derate above 25°C
xx
Thermal Resistance,
Junction to Ambient
R
R
556
°C/W
qJA
2
1
xx= Device Marking
(See Table Below)
Total Device Dissipation Alumina
Substrate, (Note 2.) T = 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
A
Thermal Resistance,
Junction to Ambient
417
°C/W
qJA
Junction and Storage Temperature
T , T
J stg
–55 to
+150
°C
1. FR–5 = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
01.06.2015
1/7
Rev :
www.leiditech.com