Datasheet > S-LBAS70BST1G

S-LBAS70BST1G

更新时间： 2022-06-24 15:43:44

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
4页	253K
描述
SCHOTTKY BARRIER DIODE

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S-LBAS70BST1G 数据手册

LESHAN RADIO COMPANY, LTD.

LBAS70BST5G , S-LBAS70BST5G

MAXIMUM RATINGS (T_A= 25°C)

Parameter

Symbol

V_R

Min.

Max.

Unit

Conditions

Continuous reverse voltage

Continuous forward current

Repetitive Peak forward surge current

Non-repetitive peak forward current

Storage temperature

I_F

°C

I_FSM

T_stg

T_j

t_p<1s;δ<0.5

100

+150

150

+150

t_p<10ms

-65

Junction temperature

°C

Operating ambient temperature

T_amb

-65

°C

ELECTRICAL CHARACTERISTICS(T_A=25°C)

Parameter

Symbol

Max.

410

750

Unit

Conditions

I_F=1mA

Forward voltage(Fig.1)

V_F

I_F=10mA

I_F=15mA

V_R=50V

Reverse current(Fig.2 ;note1)

I_R

100

nΑ

µA

V_R=70V

Charge carrier life time

(krakauer method)

100

I_F=5mA

Diode capacitance(Fig.4)

Note:

C_d

f=1MHz;V_R=0

1. Pulse test:t_p=300µs;δ=0.02.

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

VALUE

833

UNIT

k/w

CONDITIONS

Thermal resistance from junction to ambient

R_{th j-a}

note1

Note

1. FR-4 Minimum Pad.

Rev.B 2/4

123 4

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